Allicdata Part #: | SQJ990EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ990EP-T1_GE3 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 100V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 34A (Tc) 48W ... |
DataSheet: | SQJ990EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.34081 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V, 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 25V, 650pF @ 25V |
Power - Max: | 48W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual Asymmetric |
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The SQJ990EP-T1_GE3 is an integrated all-in-one solution for the purpose of providing a simplified form factor and enhanced features when compared to traditional designs. It is a high-performance transistor array designed with several advantages including a strong focus on power optimization, improved data transfer speeds, and reduced EMI interference. With applications such as motor control, LCD display, and automotive, the SQJ990EP-T1_GE3 is an ideal solution for a variety of uses.
Specifications
The SQJ903EP-T1_GE3 is an integrated 4x6 array of N-channeled transistors with a total operating voltage between 4-20V and capable of a maximum current of 2A. It has a maximum on-state resistance of 2.2ohms, a maximum drain-source breakdown voltage of 20V, and a gate-source breakdown voltage of 10V. It has a gate source capacitance of 12pF, drain-source capacitance of 4.5pF, and a maximum power dissipation of 2W.
Applications
Given their efficient power dissipation and improved data transfer rates, the SQJ990EP-T1_GE3 transistor array is well suited for motor control, LCD display, and automotive applications. The improved power optimization can provide an increase in speed, efficiency, and accuracy when compared to traditional designs. With a minimal form factor and improved features, the SQJ990EP-T1_GE3 can meet the requirements of a variety of applications.
Working Principle
The SQJ990EP-T1_GE3 transistor array operates on the principle of two-way gate conduction. When the power is applied, the components generate a current flow between their source and drain. The magnitude of this current flow is controlled by the gate conduction which is determined by the gate-to-source voltage. By accurately controlling the gate-to-source voltage, the transistor array can provide a high level of power optimization and accuracy.
Conclusion
The SQJ990EP-T1_GE3 transistor array is a high-performance, efficient solution for various applications including motor control, LCD display, and automotive that can provide an increase in speed, efficiency, and accuracy when compared to traditional designs. Its integrated all-in-one design allows for simplified form factors and enhanced features, making it an ideal solution for a variety of uses.
The specific data is subject to PDF, and the above content is for reference
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