| Allicdata Part #: | FDG6321C-F169-ND |
| Manufacturer Part#: |
FDG6321C-F169 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | INTEGRATED CIRCUIT |
| More Detail: | Mosfet Array N and P-Channel 25V 500mA (Ta), 410mA... |
| DataSheet: |  FDG6321C-F169 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Last Time Buy |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta), 410mA (Ta) |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.3nC @ 4.5V, 1.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V, 62pF @ 10V |
| Power - Max: | 300mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Description
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The FDG6321C-F169 is a type of field effect transistor, or FET, an electronic component capable of amplifying or switching electronic signals and electrical power. Specifically, this FET is an application field transistor, or AFT, which means it is designed to operate in a specific field, such as communication, medical imaging, or data processing. In this case, the FDG6321C-F169 is designed for radio frequency (RF) applications, such as cellular phones, GPS receivers, and Wi-Fi routers.An AFT is composed of several FETs (also known as transistors) that are connected in an array. Each transistor in an AFT is designed to work together to achieve the desired application, and the whole array is referred to as an AFT package.The FDG6321C-F169 consists of two FETs in an array. Each FET has its own transistor gate, drain, and source. The transistor gate of an AFT is the control point for electrical current flow, and the drain and source act as an output and input, respectively.The working principle of the FDG6321C-F169 is similar to that of a traditional FET. When the gate is turned on, the current flow is restricted to the channel between the drain and the source. When the gate is turned off, the channel between the drain and the source is opened up, which allows current flow.The FDG6321C-F169 has a relatively high frequency (up to 20GHz) operation and a low noise figure. This application field transistor is commonly used in RF applications such as cellular phones, GPS receivers, and Wi-Fi routers.The FDG6321C-F169 can be used in a variety of applications, thanks to its wide frequency range and low-noise performance. It is often used to amplify and switch radio frequency signals in amplifier circuits, as well as for Bluetooth and Wi-Fi modulation, demodulation, and switching.In conclusion, the FDG6321C-F169 is a type of application field transistor, or AFT, designed for radio frequency (RF) applications. It consists of two transistors in an array, each with its own gate, drain, and source. The gate of the AFT controls the flow of electrical current and the drain and source act as an output and input, respectively. The working principle is similar to that of a traditional FET, and the frequency range and noise performance make it suitable for a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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