IRFI4019H-117P

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	150V
Current - Continuous Drain (Id) @ 25°C:	8.7A
Rds On (Max) @ Id, Vgs:	95 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:	4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	810pF @ 25V
Power - Max:	18W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-5 Full Pack
Supplier Device Package:	TO-220-5 Full-Pak

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The IRFI4019H-117P is a field-effect transistor (FET) array that is widely used in various applications. It is a highpower enhancement-mode FET array that is designed for mobile communications and high-frequency applications. The device is a five-channel, 12 V, 120W device with a single gate inverting structure that is capable of operating in the frequency range of 10kHz to 5Mhz. In addition, the device is also well-suited for linear amplifier applications.The IRFI4019H-117P is an array of five FETs that operate as a single unit. Each FET is optimized for low on-resistance values and low gate resistance values. The FETs are connected in parallel at the source, which increases the current to up to 120 Watts. In addition, the IRFI4019H-117P is designed with a built-in ESD protection circuit that allows it to withstand up to 8KV.The IRFI4019H-117P is a low-noise device that is capable of achieving a low total harmonic distortion (THD) of 0.5%. It is also equipped with an internal zener diode and can be configured for applications up to 60 Volts. The internal zener diode provides over-voltage protection for peak voltages. Consequently, it can be used in high voltages as well as low voltage applications.The IRFI4019H-117P is designed for high-frequency applications and offers a wide range of performance and features. The device is equipped with a low-current drain that makes it suitable for portable and power-sensitive applications. It also has a high-power output that is capable of delivering up to 120W. The device is also able to operate in a wide temperature range of – 55C to + 125C.The working principle of the IRFI4019H-117P is based on the use of a field-effect transistor, which typically works by modulating the current flow through the channel via a gate voltage. The gate voltage modulates the channel width, which controls the amount of current that can flow through the channel. This is then regulated by an external voltage device, such as an amplifier or rectifier.In order to operate properly, the IRFI4019H-117P requires a DC gate control voltage and a bias voltage. The gate control voltage is applied to the gate of the device, which increases and decreases the channel opening. At the same time, the bias voltage is applied to the source of the gate, which sets the on-threshold voltage. The gate control voltage and bias voltage must be applied in order for the device to operate properly.The IRFI4019H-117P is a versatile field-effect transistor (FET) array that is widely used in various applications. It is a high-power enhancement-mode FET array that is designed for mobile communications and high-frequency applications. It is suitable for both high and low voltage applications. The device is capable of operating in the frequency range of 10kHz to 5Mhz and can deliver up to 120W. The IRFI4019H-117P is also well-suited for linear amplifier applications, due to its low THD of 0.5%. The device is also equipped with an internal zener diode and can be operated in a wide temperature range. The working principle of the device is based on its ability to modulate the current flow through the channel via a gate voltage.

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