FDG6303N_G

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The FDG6303N_G is a high performance vertical dual N-channel logic level field effect transistor array with an integrated 10k-Ω resistor that provides a superior combination of fast switching performance, low on-state resistance and low gate threshold voltage. It is available in single and dual package configurations to meet the requirements of a wide range of applications. The FDG6303N_G features a self-protected N-channel MOSFET design that provides superior immunity to electrostatic discharge (ESD). This transistors array comes in a space-saving six-pin package that is suitable for surface mount applications.

The FDG6303N_G offers superior on-state: its low on-state resistance at 4.5 Ohms provides high current carrying capacity. The dual N-channel arrangement also ensures an ultra-low off-state leakage for higher system efficiency. In addition, its integrated 10k-Ω pull-up resistor reduces power consumption, enabling higher efficiency and better reliability. Furthermore, the integrated resistor increases noise immunity and allows for the application of a wider range of voltage ratings.

The FDG6303N_G also features a high switching speed of around 150V/μs. This provides high performance in environments where fast switching speeds are required. The integrated on-chip gate driver component ensures the logic level field effect transistor array can be switched with minimal glitches, reducing power waste and increasing efficiency. Furthermore, the on-chip gate driver provides adequate voltage for efficient logic level interference and noise reduction capability.

The remarkable performance of the FDG6303N_G is enabled by its advanced manufacturing process and design. It is constructed from a layered polysilicon gate technology which provides improved reliability and ruggedness. Additionally, this process provides a high degree of integration which reduces parasitic capacitances and gate threshold voltage. All these features make the FDG6303N_G ideal for a wide range of applications, including power management, switching power supplies, audio amplifiers and charger controllers.

The FDG6303N_G is an ideal choice for a wide range of applications due to its excellent performance, fast switching speed and low on-state resistance. Its design also ensures a low voltage threshold and a high degree of integration. Furthermore, it is built using the latest polysilicon gate technology which makes the device reliable and rugged. These features make the FDG6303N_G suitable for power management, switching power supplies, audio amplifiers, and charger controllers.

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