Allicdata Part #: | IRFH4253DTRPBFTR-ND |
Manufacturer Part#: |
IRFH4253DTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 64A/145A PQFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 64A, 145A 31W,... |
DataSheet: | IRFH4253DTRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 64A, 145A |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1314pF @ 13V |
Power - Max: | 31W, 50W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PQFN (5x6) |
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IRFH4253DTRPBF is a Field Effect Transistor (FET) Arrays with two N-channel depletion-mode FETS integrated into one package. It offers a small footprint and the capability of being used in a wide range of applications, from analog interfaces and general purpose supply voltage regulators to small signal Vamp;amp;Signal Preamps. This device is ideal for applications that require a small footprint, high-speed performance and low voltage drop-out. Its small size makes it an excellent choice for space-constrained applications.
The IRFH4253DTRPBF has been designed to have a low on-resistance, high speed, and low voltage drop-out, which enables it to maintain its performance capabilities over a wide supply voltage range. It has a typically low on-resistance of 1.39 Ω, a peak switch current of 2A, and a dynamic range at an operating voltage of 96 kHz and a temperature range of 0°C ~ 70°C.
The IRFH4253DTRPBF is a small signal device and can be used for a wide range of applications including power supplies, analog circuit amplitudes, voltage regulators and DC motor controllers. The device’s integrated two depletion-mode FETS each feature a gate input, source, and drain output. These devices each carry a positive threshold voltage making it ideal for controlling currents on a digital basis. The two N-channel FETS act as two independent switches and can be used to connect or disconnect a load or circuit. The device can also be used to construct power gates, which provide a route for current to flow when the device is turned on.
Additionally, the IRFH4253DTRPBF provides extremely low voltage drop-outs, enabling the device to be used in applications with high voltage drops and higher power consumption. The device has a supply voltage range of 2.5 V – 40 V and up to 4 A peak switch current. These features make the device an ideal choice for both low-voltage and high-voltage applications.
In terms of working principle, the IRFH4253DTRPBF is an N- channel FET Array that has two N-channel FETS integrated within it. Each FET has a gate, source and drain input. When a positive gate voltage is applied, the FET is turned on while a negative gate voltage will turn the device off. The current between the source and drain terminals is then controlled by the gate-source voltage. When the source voltage is increased, current will increase; when the gate voltage is increased, current will decrease.
The IRFH4253DTRPBF offers a small size, low on-resistance, high switching speed and low voltage drop-out, making it an ideal choice for a number of applications including analog circuit filters, power supply control and small motor controllers. Additionally, the small size makes it a very attractive option for applications that are space-constrained. It also features integrated two depletion-mode FETS, making it well-suited for controlling currents on a digital basis.
The specific data is subject to PDF, and the above content is for reference
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