Allicdata Part #: | AON6918-ND |
Manufacturer Part#: |
AON6918 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 25V 15A/26.5A 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 25V 15A, 26... |
DataSheet: | AON6918 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 15A, 26.5A |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1560pF @ 15V |
Power - Max: | 2W, 2.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-DFN-EP (5x6) |
Description
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The AON6918 is a high-performance and low-cost array with an advanced silicided-emitter DMOS. This device is designed for ultra-low RON, high voltage tolerance, high current handling capacity, and integrated ESD protection. It is suitable for a wide range of applications, including motor control, power management, audio amplifiers, and portable electronics.The AON6918 is composed of a single 12V DMOS transistor array. The array includes two N-type DMOS transistors, each with a maximum drain-to-source voltage (VDS) of 12V, an on-resistance (RON) of 0.45Ω, and a switching capacity of up to 6.5A. The array also includes four P-type DMOS transistors, each with a maximum source-to-gate voltage (VSG) of 10V, an on-resistance (RON) of 0.45Ω, and a switching capacity of up to 2.1A.The AON6918 utilizes advanced silicon gate oxide and DMOS technology, which enable the device to achieve ultra-low RON and ROFF. This allows for higher efficiency, higher current handling capacity, and lower power consumption. Additionally, the AON6918 has high voltage tolerance, with a breakdown voltage (VBR) of 800V.The AON6918 also has advanced ESD protection technology, which helps to protect the device from electrostatic discharge. This is accomplished using a combination of layout, isolation, and field-effect transistor (FET) technology. Additionally, the AON6918 has an integrated thermal shutdown feature, which will activate if the device temperature reaches an unsafe level.The AON6918 can be used in a wide range of applications, including motor control, power management, audio amplifiers, and portable electronics. These applications all require low-power, high-current, and reliable operation. The AON6918 is ideal for these applications, as it provides high performance and superior thermal properties.Overall, the AON6918 is an ideal solution for a wide range of applications that require low-power, high-current, reliable, and efficient operation. The device’s advanced DMOS technology and ESD protection, along with its low RON, high voltage tolerance, and high current handling capacity make it a perfect fit for applications where performance and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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