AON6918 Allicdata Electronics
Allicdata Part #:

AON6918-ND

Manufacturer Part#:

AON6918

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 25V 15A/26.5A 8DFN
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 25V 15A, 26...
DataSheet: AON6918 datasheetAON6918 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Power - Max: 2W, 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (5x6)
Description

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The AON6918 is a high-performance and low-cost array with an advanced silicided-emitter DMOS. This device is designed for ultra-low RON, high voltage tolerance, high current handling capacity, and integrated ESD protection. It is suitable for a wide range of applications, including motor control, power management, audio amplifiers, and portable electronics.The AON6918 is composed of a single 12V DMOS transistor array. The array includes two N-type DMOS transistors, each with a maximum drain-to-source voltage (VDS) of 12V, an on-resistance (RON) of 0.45Ω, and a switching capacity of up to 6.5A. The array also includes four P-type DMOS transistors, each with a maximum source-to-gate voltage (VSG) of 10V, an on-resistance (RON) of 0.45Ω, and a switching capacity of up to 2.1A.The AON6918 utilizes advanced silicon gate oxide and DMOS technology, which enable the device to achieve ultra-low RON and ROFF. This allows for higher efficiency, higher current handling capacity, and lower power consumption. Additionally, the AON6918 has high voltage tolerance, with a breakdown voltage (VBR) of 800V.The AON6918 also has advanced ESD protection technology, which helps to protect the device from electrostatic discharge. This is accomplished using a combination of layout, isolation, and field-effect transistor (FET) technology. Additionally, the AON6918 has an integrated thermal shutdown feature, which will activate if the device temperature reaches an unsafe level.The AON6918 can be used in a wide range of applications, including motor control, power management, audio amplifiers, and portable electronics. These applications all require low-power, high-current, and reliable operation. The AON6918 is ideal for these applications, as it provides high performance and superior thermal properties.Overall, the AON6918 is an ideal solution for a wide range of applications that require low-power, high-current, reliable, and efficient operation. The device’s advanced DMOS technology and ESD protection, along with its low RON, high voltage tolerance, and high current handling capacity make it a perfect fit for applications where performance and reliability are required.

The specific data is subject to PDF, and the above content is for reference

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