Allicdata Part #: | IRFR3504ZPBFTR-ND |
Manufacturer Part#: |
IRFR3504ZTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 42A DPAK |
More Detail: | N-Channel 40V 42A (Tc) 90W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3504ZTRPBF Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFR3504ZTRPBF is a single-channel N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) developed by International Rectifier and Infineon Technologies. The device possesses a very low on-state resistance (RDS-on) and superior gate-source voltage (VGS) performance. It features a breakdown voltage of 400V and a maximum drain current of 50A. The IRFR3504ZTRPBF is mainly used in a variety of commercial and industrial applications such as motor controls, brushed DC motors, solenoid controls, switching power supplies and solar inverters.
A MOSFET consists of a semiconductor layer between two metal gates. When a voltage is applied to the gate, it attracts charge carriers—either electrons or holes—to the semiconductor layer. This changes the conductivity of the semiconductor, which allows current to flow. The IRFR3504ZTRPBF has a low on-state resistance which means it has a high electrical conductivity when the gate voltage is applied, allowing more current to flow through it. This allows the device to carry higher currents with less voltage. The device also has a high-voltage rating and can handle high voltage spikes without damage.
The IRFR3504ZTRPBF is designed to provide high levels of efficiency. It has a high gate-source voltage specification which means that less voltage is needed to close the channel, allowing for more efficient operation. The high switching speed of the device also contributes to its efficiency, as it minimizes the power losses associated with switching high-power currents. The device also has a low total gate charge and is fast switching, allowing the device to operate at higher frequencies without compromising performance.
The IRFR3504ZTRPBF is also designed to be a robust device. It has very low gate-source leakage currents and is protected against electrostatic discharge (ESD). The device features a high energy absorption capability, allowing it to absorb a large amount of energy in the event of an ESD event. This protects the device from damage as well as protecting surrounding components. The device also features a robust internal protection diode which helps protect the device and surrounding components in the event of an over-voltage condition.
In addition to the versatility and robustness of the device, the IRFR3504ZTRPBF also offers excellent thermal performance. It has a low thermal resistance allowing the device to dissipate the heat dissipated by the current with less input power. This helps increase efficiency, reduce power losses and extend the operational lifetime of the device. The device also has a low power fade coefficient, meaning it can maintain its performance for longer periods of time before degrading.
The IRFR3504ZTRPBF is an ideal solution for a wide range of commercial and industrial applications. Its combination of low on-state resistance, robust design, high voltage and current ratings, plus excellent thermal and electrical performance makes it ideal for motor controls, switching power supplies and solar inverters. It is an ideal low-cost solution for applications where a reliable, efficient and robust device is required.
The specific data is subject to PDF, and the above content is for reference
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