BSC032N04LSATMA1

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta), 98A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to BSC032N04LSATMA1

The BSC032N04LSATMA1 is a single-channel enhancement-mode transistor designed for High Voltage, High Speed switching applications. This power MOSFET features an identical footprint to a TO-220 package, and allows for more efficient power management, higher power density, and lower switching losses.

Application Field and Working Principle

The BSC032N04LSATMA1 is suitable for switching high power loads in a wide range of applications, including motor applied in white goods and industrial equipment, lighting, and electronic Point-of-sale (POS) display. It’s also used in other applications such as battery chargers, UPS, DC-to-DC converters, switch mode power supplies, and automotive electronics.The BSC032N04LSATMA1 has an efficient power switch structure. It is a five pin power MOSFET that consists of four N-type MOSFETs internally connected in a series configuration for high voltage operation. It is operationally superior to other FETs in terms of switching speed, lower on resistance, and lower gate charge.An important aspect of the operation of this device is its gate voltage. Since the BSC032N04LSATMA1 is an enhancement mode device, it must be biased in the on-state before it can be used. The gate voltage determines the current flow through the gate-channel region and affects its on-resistance. By applying a positive voltage to the gate, the current will flow through the gate-channel region and the FET will turn on allowing a high current flow through the device.The BSC032N04LSATMA1 supports several protection features such as body diode protection, internal fusible link, and thermal shutdown protection. The body diode protection functionality prevents power dissipation in accidental short circuit configuration. The internal fusible link eliminates large current flows in overload situation. The thermal shutdown protection mechanism is designed to limit the power dissipation in the device.

Conclusion

In conclusion, the BSC032N04LSATMA1 is a high efficiency MOSFET designed for high-voltage, high-speed switching applications. It is suitable for a variety of applications such as motor control, lighting, and POS displays. This device features multiple protection features such as body diode protection and thermal shutdown protection. The gate voltage is an important factor in its operation, as it affects the on-resistance of the device.

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