IPD30N06S4L23ATMA2 Discrete Semiconductor Products |
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Allicdata Part #: | IPD30N06S4L23ATMA2TR-ND |
Manufacturer Part#: |
IPD30N06S4L23ATMA2 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 30A TO252-3 |
More Detail: | N-Channel 60V 30A (Tc) 36W (Tc) Surface Mount PG-T... |
DataSheet: | IPD30N06S4L23ATMA2 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.20159 |
Vgs(th) (Max) @ Id: | 2.2V @ 10µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-11 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1560pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD30N06S4L23ATMA2 is a N-channel MOSFET, one of the most common types of transistor used in modern digital electronics. This particular type has a maximum drain-source voltage of 33 volts, with a maximum continuous drain current of 25 amperes. It also has a P-D-S resistance of 0.0033 ohms, with an avalanche and diode energy rating of 287 millijoules. Because of its relatively low drain-source voltage and low on-state resistance, the IPD30N06S4L23ATMA2 is commonly used in medium-voltage and low-power device applications.
MOSFETs work on the concepts of resistance and capacitance, as well as the so-called "MOS" transistor. When voltage is applied to the gate terminal, it acts like a capacitor and causes a voltage drop across the drain and source terminals. This causes a current to flow through the MOSFET, which can be controlled by varying the voltage applied to the gate terminal. This makes MOSFETs an ideal transistor for controlling digital signals, as the current flow can be precisely adjusted, allowing for accurate and efficient operation.
The IPD30N06S4L23ATMA2 is particularly suitable for applications that require a high level of power efficiency, such as computer processors and power amplifiers. It is also well-suited for use in applications where clear signal switching is required, such as audio amplifiers. Additionally, its low on-state resistance makes it well-suited for use in low-power switch mode power supplies, where precise current switching is essential in order to achieve maximum efficiency.
In summary, the IPD30N06S4L23ATMA2 is a high-efficiency, low-power N-channel MOSFET, ideal for applications that require precise signal switching, power control, or efficient power management. Its low on-state resistance and relatively low maximum drain-source voltage make it a viable solution for medium-voltage and low-power applications, and its ability to switch both high and low currents with precise accuracy makes it perfect for audio amplifiers, computer processors, power amplifiers, and low-power switch mode power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPD30N03S2L07ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A TO252... |
IPD30N06S223ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
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IPD30N06S2L-13 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N06S2L23ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD33CN10NGATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 27A TO25... |
IPD30N06S2-15 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N06S4L23ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A TO252... |
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