IPG20N06S2L35ATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | IPG20N06S2L35ATMA1TR-ND |
| Manufacturer Part#: |
IPG20N06S2L35ATMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 55V 20A TDSON-8-4 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 55V 20A 65W Surfac... |
| DataSheet: |  IPG20N06S2L35ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 27µA |
| Base Part Number: | *PG20N06 |
| Supplier Device Package: | PG-TDSON-8-4 |
| Package / Case: | 8-PowerVDFN |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power - Max: | 65W |
| Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 15A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A |
| Drain to Source Voltage (Vdss): | 55V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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IPG20N06S2L35ATMA1 is an array of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) which are integrated circuit elements with a variety of uses in electronic circuits. Field Effect Transistors (FETs) are three terminal devices that can be used to switch and regulate current in circuits. These devices have been around for more than half a century and have a wide range of applications in areas such as telecommunications, aerospace, motor control, power systems, and even consumer electronics.The IPG20N06S2L35ATMA1 has an industry-standard lead frame package and is designed for space-saving applications in industrial, consumer and computing applications. The device has a wide range of features such as low on-resistance, fast switching speed, and ESD protection for the gate to drain connection. The maximum drain-source voltage is rated at 20 Volts and the maximum gate threshold voltage is rated at 4 Volts.The primary function of MOSFETs is to switch or amplify electrical signals in digital and analog circuits. They are typically used to control electric current between two points in a circuit. In addition to this, they can also be used to control the frequency or impedance of a signal. Furthermore, they can also be utilized to boost the current output of a signal or to control the voltage in the circuit. The basic operating principle of the IPG20N06S2L35ATMA1 is that of a voltage-controlled current source. It consists of a source and drain connected by a channel which is controlled by a gate. When a voltage is applied to the gate, it controls the flow of electrons through the channel between the source and drain by modifying the electric field within the channel. This results in a change in the gate-source voltage, which causes a change in the current flow between the source and the drain.In short, the IPG20N06S2L35ATMA1 is an array of MOSFETs that is designed for space-saving applications in industrial, consumer and computing applications. It has a wide range of features such as low-on resistance, fast switching speed, and ESD protection for the gate to drain connection. It is typically used to control electric current between two points in a circuit by way of a voltage-controlled current source. In addition to this, they can also be used to control the frequency or impedance of a signal, as well as to boost the current output of a signal or to control the voltage in the circuit.
The specific data is subject to PDF, and the above content is for reference
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