IPD50R520CPBTMA1

Series:	*
Part Status:	Obsolete

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IPD50R520CPBTMA1 - Overview

The IPD50R520CPBTMA1 is a Single N-Channel Enhancement Mode Mosfet, manufactured by Infineon. The product utilizes an advanced trench technology which combines multiple components into a single, extremely compact package. This makes it suitable for a broad range of applications including automotive, consumer electronics and telecom applications, where space-efficiency is essential.

IPD50R520CPBTMA1 Applications

The IPD50R520CPBTMA1 has a range of applications, such as power management and load switching for DC/DC and AC/DC converters, and current sensing applications. It is especially suited to automotive applications, where its extremely high capacitive load switching characteristics make it suitable for boosting high efficiency. Other applications include switching DC/DC converters, motor control, power management and industrial power conversion applications.

IPD50R520CPBTMA1 Working Principle

The IPD50R520CPBTMA1 is an enhancement-mode MOSFET, which is capable of a wide range of operating frequencies and voltage. The product is designed with superior power dissipation performance and high gate-sourcing current capabilities. Its high-speed switching capabilities enable it to handle high-frequency switching operations, such as DC to DC converters, power supplies and motor speed control.The device\'s working principle is based upon the metal-oxide-semiconductor field-effect transistor (MOSFET) structure. It consists of a gate, source and drain, which are made from a thin layer of silicon. When a voltage is applied to the gate, it causes an electric field to be generated between the source and drain, allowing current to flow from the source to the drain. This is known as the body effect, which provides the device with the ability to switch between high and low voltage states.The device has an integral body diode, meaning it is able to protect the MOSFET against inductive switching, transient overvoltages, and reverse power dissipation. This is an important feature, as it allows the device to operate within a wide range of conditions, including applications that are exposed to repetitive or harsh operating environments.

In conclusion

The IPD50R520CPBTMA1 is a single N-Channel Enhancement Mode MOSFET, manufactured by Infineon. The product\'s advanced trench technology combines multiple components into a single, exceptionally compact package, allowing it to be utilized in a wide range of applications such as automotive, consumer electronics, telecom and power management applications. The device\'s working principle is based upon the MOSFET structure, which consists of a gate, source and drain, and is capable of handling high frequency switching operations. The device features an integral body diode, allowing it to operate within a wide range of conditions.

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