IRGP4266D-EPBF

Switching Energy:	2.5mJ (on), 2.2mJ (off)
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	170ns
Test Condition:	400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C:	50ns/200ns
Gate Charge:	210nC
Input Type:	Standard
Series:	--
Power - Max:	455W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 75A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	140A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRGP4266D-EPBF is a high-performance, insulated gate bipolar transistor (IGBT) designed for use in a wide range of power conversion applications. This device provides outstanding performance and reliability, excellent immunity from short circuit failure, and allows much higher switching frequencies compared to traditional silicon-based devices. This article will discuss the application field and working principle of the IRGP4266D-EPBF.

Application Field of the IRGP4266D-EPBF

The IRGP4266D-EPBF is used in a variety of power conversion applications. These include adjustable speed drives, uninterruptible power supplies, battery chargers, motor control systems, and home appliances. The device\'s excellent switching performance and high reliability make it ideal for use in these applications. Additionally, the device has an excellent immunity to short circuit failure, which makes it a safe choice for use in many power conversion applications.

Working Principle of the IRGP4266D-EPBF

The IRGP4266D-EPBF is an insulated gate bipolar transistor device. It consists of a semiconductor layer sandwiched between two dielectric layers, which act as the gate insulator. The gate electrode is connected to the base of the device, which causes the channel to be opened when a voltage is applied. This gate voltage is then used to control the device\'s current flow. When the gate voltage is boosted, the drain current increases, creating an efficient switching action. The device has a voltage operational range of 600V and a maximum current capacity of 82 A.

Conclusion

The IRGP4266D-EPBF is a high-performance, insulated gate bipolar transistor (IGBT) designed for use in a wide range of power conversion applications. It offers excellent performance, reliability, and immunity from short circuit failure. Its voltage operational range is 600V and its maximum current capacity is 82 A. This device is ideal for use in adjustable speed drives, uninterruptible power supplies, battery chargers, motor control systems, and home appliances.

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