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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FP150R12KT4PBPS A1-ND	FP150R12KT4PBPS A1	Infineon Technologies	View more Series: EconoPIM3 Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 9.35nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	6 Order	1+: $165.948
FS20R06VE3B2BOM A1-ND	FS20R06VE3B2BOM A1	Infineon Technologies	View more Series: EasyPACK Part Status: Not For New Designs Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Power - Max: 71.5W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.14nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	40+: $11.8752
IRG7PH35UPBF-ND	IRG7PH35UPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620J (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25C: 30ns/160ns Test Condition: 600V, 20A, 10 Ohm, 15V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
FP25R12KT4B11BO SA1-ND	FP25R12KT4B11BO SA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Power - Max: 160W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.45nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $39.4059
FS35R12KE3GBOSA 1-ND	FS35R12KE3GBOSA 1	Infineon Technologies	View more Series: EconoPACK 2 Part Status: Active Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 200W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $46.0429
IRG8B08N120KDPB F-ND	IRG8B08N120KDPB F	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300J (on), 300J (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25C: 20ns/160ns Test Condition: 600V, 5A, 47 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1000 Order	1+: $0
FF450R12IE4BOSA 2-ND	FF450R12IE4BOSA 2	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 450A Power - Max: 2550W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 450A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 27nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	3+: $238.071
FD800R17HP4KB2B OSA2-ND	FD800R17HP4KB2B OSA2	Infineon Technologies	View more Part Status: Active Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 800A Power - Max: 5200W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 65nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $628.132
PTFB211803ELV1R 250XTMA1-ND	PTFB211803ELV1R 250XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.17GHz Gain: 17.5dB Voltage - Test: 30V Current - Test: 1.3A Power - Output: 40W Voltage - Rated: 65V Package / Case: H-33288-6 Supplier Device Package: H-33288-6	1000 Order	1+: $0
IRF7455PBFTR-ND	IRF7455TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	4000 Order	--
BF771E6327HTSA1 TR-ND	BF771E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	15000+: $0.0578
BFP450H6433XTMA 1TR-ND	BFP450H6433XTMA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP450	1000 Order	10000+: $0.1229
BCR523UE6433HTM A1TR-ND	BCR523UE6433HTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	1000 Order	10000+: $0.0536
SMBT3904PNE6327 HTSA1TR-ND	SMBT3904PNE6327 HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	1000 Order	1+: $0
IPG20N04S4L07AA TMA1-ND	IPG20N04S4L07AA TMA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	1000 Order	5000+: $0.5076
BSO203PNTMA1TR- ND	BSO203PNTMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2242pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	1000 Order	1+: $0
BCR183E6327HTSA 1TR-ND	BCR183E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Base Part Number: BCR183	6000 Order	3000+: $0.0224 6000+: $0.0202 15000+: $0.0176 30000+: $0.0158 75000+: $0.0141 150000+: $0.0117
IRF1404LPBF-ND	IRF1404LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1312 Order	1+: $1.827 10+: $1.6481 100+: $1.3245 500+: $1.0302 1000+: $0.8536
IPS80R2K4P7AKMA 1-ND	IPS80R2K4P7AKMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V Power Dissipation (Max): 22W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1500 Order	1+: $0.6552 10+: $0.5739 100+: $0.4429 500+: $0.3281 1000+: $0.2624
IRG4BC40W-LPBF- ND	IRG4BC40W-LPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110J (on), 230J (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25C: 27ns/100ns Test Condition: 480V, 20A, 10 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, IPak, TO-262AA Supplier Device Package: TO-262	18 Order	--
BC818K16WH6327X TSA1TR-ND	BC818K16WH6327X TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BC818	1000 Order	42000+: $0.0194
BSC196N10NSGATM A1TR-ND	BSC196N10NSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.5A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19.6 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 42A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 50V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.3173
IPB011N04NGATMA 1TR-ND	IPB011N04NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	--
IPT60R125G7XTMA 1TR-ND	IPT60R125G7XTMA 1	Infineon Technologies	View more Series: CoolMOS G7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 4V @ 320A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	1000 Order	2000+: $1.4614
IGB20N60H3ATMA1 TR-ND	IGB20N60H3ATMA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 170W Switching Energy: 690J Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25C: 16ns/194ns Test Condition: 400V, 20A, 14.6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: DPAK (TO-263AB) Base Part Number: 30N60	1000 Order	1000+: $0.7188
IRF7493PBFTR-ND	IRF7493TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IPW60R031CFD7XK SA1-ND	IPW60R031CFD7XK SA1	Infineon Technologies	View more Series: CoolMOS CFD7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 32.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5623pF @ 400V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $9.7902 10+: $8.9 240+: $7.565
SPU02N60C3BKMA1 -ND	SPU02N60C3BKMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 80A Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	87 Order	1+: $0.8379 10+: $0.744 100+: $0.5882 500+: $0.4562 1000+: $0.3602
TC214S8F133FABK XUMA1-ND	TC214S8F133FABK XUMA1	Infineon Technologies	View more Series: AURIX Part Status: Not For New Designs Core Processor: TriCore Core Size: 32-Bit Speed: 133MHz Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Number of I/O: 120 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: 64K x 8 RAM Size: 56K x 8 Voltage - Supply (Vcc/Vdd): 3.3V Data Converters: A/D 24x12b Oscillator Type: External Operating Temperature: -40C ~ 125C (TA)	1000 Order	1000+: $3.9191
C505CA4EMCAFXUM A1-ND	C505CA4EMCAFXUM A1	Infineon Technologies	View more Series: C5xx/C8xx Packaging: Tape & Reel (TR) Part Status: Last Time Buy Core Processor: C500 Core Size: 8-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 34 Program Memory Size: 32KB (32K x 8) Program Memory Type: OTP RAM Size: 1.25K x 8 Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 44-QFP Supplier Device Package: P-MQFP-44	1000 Order	1000+: $5.16
XMC4700F144F204 8AAXQMA1-ND	XMC4700F144F204 8AAXQMA1	Infineon Technologies	View more Series: XMC4000 Packaging: Tray Part Status: Active Core Processor: ARM Cortex-M4 Core Size: 32-Bit Speed: 144MHz Connectivity: CANbus, EBI/EMI, Ethernet, IC, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC Peripherals: DMA, IS, LED, POR, Touch-Sense, WDT Number of I/O: 119 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH RAM Size: 352K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 32x12b, D/A 2x12b Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 144-LQFP Exposed Pad Supplier Device Package: PG-LQFP-144-24	1000 Order	360+: $6.5019
TC1791F512F240E PABKXUMA2-ND	TC1791F512F240E PABKXUMA2	Infineon Technologies	View more Series: TC17xx Packaging: Tape & Reel (TR) Part Status: Active Core Processor: TriCore Core Size: 32-Bit Speed: 240MHz Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC Peripherals: DMA, POR, WDT Number of I/O: 128 Program Memory Size: 4MB (4M x 8) Program Memory Type: FLASH EEPROM Size: 192K x 8 RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V Data Converters: A/D 8x10b, 44x12b Oscillator Type: External Operating Temperature: -40C ~ 125C (TA) Package / Case: 292-LFBGA Supplier Device Package: PG-LFBGA-292-6	1000 Order	1000+: $12.1405
XE167HM72F80LAA FXUMA1TR-ND	XE167HM72F80LAA FXUMA1	Infineon Technologies	View more Series: XE16x Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 119 Program Memory Size: 576KB (576K x 8) Program Memory Type: FLASH RAM Size: 50K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 24x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 144-LQFP Exposed Pad Supplier Device Package: 144-LQFP (20x20) Base Part Number: SA*XE167HM	1000 Order	1+: $0
SAF-XE162HN-40F 80LAA-ND	SAF-XE162HN-40F 80L AA	Infineon Technologies	View more Series: XE16x Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 320KB (320K x 8) Program Memory Type: FLASH RAM Size: 34K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 9x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64-6 Base Part Number: SA*XE162HN	1000 Order	1+: $0
XC2336B40F20LAA KXUMA1TR-ND	XC2336B40F20LAA KXUMA1	Infineon Technologies	View more Series: XC23xxB Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 38 Program Memory Size: 320KB (320K x 8) Program Memory Type: FLASH RAM Size: 34K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 9x10b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64-6 Base Part Number: SA*XC2336B	1000 Order	1+: $0
XMC4108Q48K64AB XUMA1TR-ND	XMC4108Q48K64AB XUMA1	Infineon Technologies	View more Series: XMC4000 Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Core Processor: ARM Cortex-M4 Core Size: 32-Bit Speed: 80MHz Connectivity: CANbus, IC, LINbus, SPI, UART/USART, USB Peripherals: DMA, IS, LED, POR, PWM, WDT Number of I/O: 21 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH RAM Size: 20K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 9x12b, D/A 2x12b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 48-VFQFN Supplier Device Package: 48-QFN (7x7)	1000 Order	--
SIPC05N80C3X1SA 2-ND	SIPC05N80C3X1SA 2	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	26676+: $0.3056
IRFR18N15DTRRP- ND	IRFR18N15DTRRP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	6000+: $0.3613
IRG4BC30F-S-ND	IRG4BC30F-S	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230J (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	--
IRF7421D1-ND	IRF7421D1	Infineon Technologies	View more Series: FETKY Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0

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