Allicdata Part #: | PTFB211803ELV1R250XTMA1-ND |
Manufacturer Part#: |
PTFB211803ELV1R250XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS 30V 1.3A 2.17GHz 17.5dB 40W H-3328... |
DataSheet: | PTFB211803ELV1R250XTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 17.5dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | H-33288-6 |
Supplier Device Package: | H-33288-6 |
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The PTFB211803ELV1R250XTMA1 is an RF MOSFET transistor. It is an N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is used for communications and radio frequency (RF) applications. The PTFB211803ELV1R250XTMA1 provides a high power and wide band gain that supports high frequency operation.
The PTFB211803ELV1R250XTMA1 is used in many RF-related applications, including switching, amplification and signal modulation. It is ideal for applications where high power and efficiency are required. It is commonly used in mobile devices such as smartphones, tablets, and laptops, as well as in base stations, GPS receivers, and other communication systems.
The PTFB211803ELV1R250XTMA1 has a typical drain to source breakdown voltage of 25V and a steady state avalanche energy of 10mJ. This makes it suitable for applications with higher voltage requirements, such as base station radios and GPS receivers. The device also has a maximum drain current of 17A and can handle a peak power dissipation of 0.3W.
The main advantage of the PTFB211803ELV1R250XTMA1 is its low on-resistance, which is important in high power applications. The device also has a low gate charge and high transconductance, which allows for fast switching. Its low gate to source capacitance also helps reduce signal distortion, making it ideal for operation at high frequencies.
The working principle of the PTFB211803ELV1R250XTMA1 is based on the principle of the MOSFET transistor. In an N-Channel Enhancement Mode MOSFET, the gate electrode is connected to the source and forms a capacitor. When the gate voltage is increased, a channel is created between the drain and the source. This channel allows current to flow between the drain and the source and is regulated by the gate voltage.
The PTFB211803ELV1R250XTMA1 is a versatile RF MOSFET transistor that can be used in many different applications. Its high power and efficiency make it suitable for use in high frequency applications and its low on-resistance and transconductance make it suitable for fast switching and signal modulation.
The specific data is subject to PDF, and the above content is for reference
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