IRFR18N15DTRRP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFR18N15DTRRP is a dual N-channel, short channel, insulated-gate, field-effect transistor (IGFET) that operates from -55 degrees Celsius to 175 degrees Celsius temperature range. It is designed for switching and linear applications. The device is commonly used for general purpose amplifying, logic level conversions, and low and medium speed switching.

The IRFR18N15DTRRP transistor is a single device, meaning that two transistors with two independent gates (IGs) and two sources are integrated into one IC package. This type of device reduces size, as compared to using two distinct transistors. Additionally, a single device can achieve a wider temperature range than using two seperate transistors.

The IRFR18N15DTRRP features direct connections between the gates and sources, minimizing thermal runaway during operation. This means that the drain-to-source voltage will remain constant during operation, making the device an excellent choice for applications that require a steady voltage (like power supplies).

The maximum drain-to-source voltage of this device is 20 V, and its maximum drain current is 18 A. The minimum breakdown voltage is 350 mV, and the small-signal transconductance is minimum 400 mS. This device sports an RDSon from 5 mOhm maximum to12 mOhm maximum at VGS=10V.

The IRFR18N15DTRRP transistor is ideal for applications that require large current sourcing and sinking. The two independent gates can be used for low and medium speed switching of power supplies and other digital signals. Additionally, its integrated design makes it well-suited for handheld applications, where space is of the essence.

The IRFR18N15DTRRP transistor features a working principle similar to other FETs. It uses a gate-to-source voltage (VGS) or gate-to-drain voltage (VDS) to control the current, depending on the type of operation required (i.e. switching or linear).

When the voltage applied between the gate and the source is positive, the device will act as an enhancement type MOSFET. This will result in the device allowing current to pass between the source and the drain. Conversely, when the voltage applied between the gate and the source is negative, the device will act as a depletion type MOSFET, meaning that the device will not allow current to pass between the source and the drain.

In switching applications, the gate-to-source voltage (VGS) determines the device\'s threshold voltage. This threshold voltage is the voltage at which the MOSFET will turn on or off. The higher the voltage, the lower the threshold voltage and the easier it is for the MOSFET to be switched on or off. In linear applications, the gate-to-drain voltage (VDS) must be maintained in order to achieve the desired linearity of the current.

The IRFR18N15DTRRP transistor can be used in a variety of applications, including power supplies and other electronic circuits. The device is highly efficient and reliable, making it well-suited for demanding applications. In addition, its integrated design results in a smaller form factor and easier installation.

Overall, the IRFR18N15DTRRP transistor is a high-performance, low-power device well-suited for a variety of applications. Its wide temperature range and its dual-channel design make it an ideal choice for applications that require large current sourcing and sinking. Additionally, its two independent gates can be used for low and medium speed switching of power supplies and other digital signals.

The specific data is subject to PDF, and the above content is for reference