IRF7455TRPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3480pF @ 25V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	56nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRF7455TRPBF application field and working principle

The IRF7455TRPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) developed by International Rectifier, now part of Infineon Technologies. The IRF7455TRPBF is a single N-channel enhancement mode MOSFET, which means that it is a switch with only one field-effect controlled electrical path leading from the drain to the source. Its main application is in low-load switching, such as small heaters or LEDs. Beyond this, they are also employed in small motor control and control of audio amplifiers, among other functions.The IRF7455TRPBF offers maximum drain-source voltage ratings up to 320V and maximum drain current ratings up to 34.5A. It is available in a low-profile, space-saving Surface Mount Device (SMD) package, which makes it suitable for applications with tight space constraints, such as mobile devices. The IRF7455TRPBF is designed for use in applications that require high efficiency and ruggedness, such as power converters, power switches, and power monitoring.

Working Principle

A MOSFET is an electronic device that uses electronic charge to control the flow of electrons. It is a four-terminal device, with three terminals connected to an electrical circuit and the fourth terminal connected to the gate. The gate terminal acts as a switch, opening and closing the electrical connection between the source and the drain of the MOSFET when an appropriate level of voltage is applied.The MOSFET consists of two active regions separated by a p-n junction: the source region, which contains a positive charge, and the drain region, which contains a negative charge. When there is no voltage applied to the gate terminal, the source and drain regions remain separated, and no current passes between them. When a positive voltage is applied to the gate terminal, however, the positive charge from the source region repels the negative charge from the drain region, allowing electrons to flow from the source to the drain. By adjusting the voltage applied to the gate terminal, the flow of electrons can be controlled.

Uses

IRF7455TRPBF MOSFETs are commonly used in a variety of applications, such as small motor control, audio amplifiers, and low-load switching. For example, they are used to control the flow of small amounts of current to control motors, such as in small fans and pumps. They can be used to control the volume of an audio amplifier, allowing the user to adjust the sound level. Additionally, they can be used in low-load switching, such as controlling the operation of small heaters or LEDs.The IRF7455TRPBF’s small size and low voltage ratings also make it ideal for use in small, highly portable devices. For example, they can be used in mobile phones and other mobile devices to control the flow of power from their batteries, allowing them to operate for longer periods of time. Additionally, they are suitable for use in power monitoring applications, such as in solar and wind power generation, due to their high levels of efficiency and ruggedness.

Conclusion

The IRF7455TRPBF is a single N-channel MOSFET developed by International Rectifier, now part of Infineon Technologies. It is a switching device, with only one field-effect controlled electrical path leading from the drain to the source. The IRF7455TRPBF is designed for use in low-load switching, such as small heaters or LEDs, as well as small motor control and control of audio amplifiers. Its maximum drain-source voltage rating is up to 320V, and it is available in a low-profile, space-saving SMD package. The IRF7455TRPBF is suitable for applications that require high efficiency and ruggedness, such as power converters, power switches, and power monitoring.

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