SIPC05N80C3X1SA2

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The SIPC05N80C3X1SA2 is a power MOSFET with a high current rating and a fast switching speed. It is a n-channel enhancement mode MOSFET with a low gate to source voltage capacity, making it ideal for use in a wide variety of applications from switching power supply and DC-DC converters to high-side load switching and signal processing. The MOSFET is part of the SIPC family from ROHM and has a drain to source on-state resistance of 0.05 ohms, a maximum drain current of 10A, and an operating temperature range of -40 to 175 degrees Celsius.

The SIPC05N80C3X1SA2 is suitable for use in a variety of applications. It can be used as a high-side switch in applications such as power supplies, DC-DC converters, and high-current signal processing. It can also be used as a low-side switch in motor control and power supply applications. As a low-side switch, it can control the current to a motor with a low gate to source voltage, allowing for faster switching and better efficiency.

The working principle of a MOSFET is based on the fact that the gate voltage changes the conductivity of the channel between the drain and the source. A positive gate voltage will allow current to flow from the drain to the source, while a negative gate voltage will block it. When a voltage is applied to the gate, a depletion layer is formed at the interface between the gate and the channel. This depletion layer acts as an insulating layer, preventing the flow of current between the drain and the source until the gate voltage reaches a certain threshold. Once the Gate voltage reaches the threshold voltage, the current starts to flow in the drain to source direction.

The fast switching speeds of the SIPC05N80C3X1SA2 make it ideal for applications that require rapid switching. The fast switching speeds of these MOSFETs also make them suitable for power supply applications that require high efficiency, as well as applications that require low power consumption. These MOSFET’s also have a low gate to source voltage which allows for low power consumption, further enhancing their efficiency.

The SIPC05N80C3X1SA2 is a versatile, high-performance power MOSFET with a wide range of applications. It is a n-channel enhancement mode MOSFET with a low gate to source voltage capacity making it the ideal choice for high-side load switching, motor control, and signal processing applications. It has a fast switching speed and a high drain current rating making it suitable for high-current applications. It has an operating temperature range of -40 to 175 degrees Celsius, making it suitable for a wide range of applications.

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