Infineon embedded microprocessor - Allicdata Electronics

Related Categories

< 225 226 227 228 229 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
DD350N14KHPSA1- ND	DD350N14KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 350A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 30mA @ 1400V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	3+: $96.5349
DD230S18KHPSA1- ND	DD230S18KHPSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	3+: $128.432
DD540N26KHPSA1- ND	DD540N26KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600V Current - Average Rectified (Io) (per Diode): 540A Voltage - Forward (Vf) (Max) @ If: 1.48V @ 1700A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 40mA @ 2600V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $198.479
IRDC3891-ND	IRDC3891	Infineon Technologies	View more Series: SupIRBuck Part Status: Active Main Purpose: DC/DC, Step Down Outputs and Type: 2, Non-Isolated Voltage - Output: 1.2V, 1.8V Current - Output: 4A, 4A Voltage - Input: 12V Regulator Topology: Buck Frequency - Switching: 600kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IR3891	1000 Order	1+: $18.8937
IRDC3832W-ND	IRDC3832W	Infineon Technologies	View more Series: SupIRBuck Part Status: Active Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Voltage - Output: 0.75V Current - Output: 4A Voltage - Input: 12V Regulator Topology: Buck Frequency - Switching: 400kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IR3832W	1000 Order	1+: $59.0625
IRDC3475-ND	IRDC3475	Infineon Technologies	View more Series: SupIRBuck Part Status: Obsolete Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Voltage - Output: 1.05V Current - Output: 10A Voltage - Input: 8 V ~ 19 V Regulator Topology: Buck Frequency - Switching: 300kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IR3475	1000 Order	1+: $0
IRF2807STRRPBF- ND	IRF2807STRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPD046N08N5ATMA 1-ND	IPD046N08N5ATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.8V @ 65A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 40V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.65
IPA65R420CFDXKS A1-ND	IPA65R420CFDXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 340A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Power Dissipation (Max): 31.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $0.7909
SIPC18N50C3X1SA 1-ND	SIPC18N50C3X1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	7007+: $0.9351
IRFS59N10DTRLP- ND	IRFS59N10DTRLP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPB100N06S2L05A TMA2-ND	IPB100N06S2L05A TMA2	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.9968
IPI80N08S406AKS A1-ND	IPI80N08S406AKS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $1.0081
IRFI3306GPBF-ND	IRFI3306GPBF	Infineon Technologies	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V Power Dissipation (Max): 46W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	1000 Order	--
IPW50R350CPFKSA 1-ND	IPW50R350CPFKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 370A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 100V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $0
AUIRF1404STRL-N D	AUIRF1404STRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.5637
IPP120N08S403AK SA1-ND	IPP120N08S403AK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 223A Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $3.2256 10+: $2.8816 100+: $2.3627 500+: $1.9132 1000+: $1.6136
IRFSL38N20DPBF- ND	IRFSL38N20DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $1.6787
SPW35N60CFDFKSA 1-ND	SPW35N60CFDFKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 34.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 118 mOhm @ 21.6A, 10V Vgs(th) (Max) @ Id: 5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 25V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	240+: $6.5875
GATELEADWHRD762 XPSA1-ND	GATELEADWHRD762 XPSA1	Infineon Technologies	View more Part Status: Active	1000 Order	1+: $6.0102
GATELEADWHBK750 XXPSA1-ND	GATELEADWHBK750 XXPSA1	Infineon Technologies	View more Part Status: Active	1000 Order	1+: $8.3538
TLE49632MXTSA1T R-ND	TLE49632MXTSA1	Infineon Technologies	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active	3000 Order	--
FF600R12ME4BOSA 1-ND	FF600R12ME4BOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Power - Max: 4050W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 37nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	16 Order	1+: $150.11
IRG7PH30K10DPBF -ND	IRG7PH30K10DPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 180W Switching Energy: 530J (on), 380J (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25C: 14ns/110ns Test Condition: 600V, 9A, 22 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
BSM10GD120DN2E3 224BOSA1-ND	BSM10GD120DN2E3 224BOSA1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Power - Max: 80W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A Current - Collector Cutoff (Max): 400A Input Capacitance (Cies) @ Vce: 530pF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $35.8533
FP30R06KE3BOSA1 -ND	FP30R06KE3BOSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 37A Power - Max: 125W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.65nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $40.2501
BSM300GB60DLCHO SA1-ND	BSM300GB60DLCHO SA1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 375A Power - Max: 1250W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 13nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $102.408
FP100R12KT4B11B OSA1-ND	FP100R12KT4B11B OSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 515W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 6.3nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $104.306
FS100R17PE4BOSA 1-ND	FS100R17PE4BOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 100A Power - Max: 600W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 9nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	6+: $110.463
FF600R17ME4BOSA 1-ND	FF600R17ME4BOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700V Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 48nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $181.555
FD1200R17KE3KNO SA1-ND	FD1200R17KE3KNO SA1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Dual Brake Chopper Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 1600A Power - Max: 5950W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 110nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
6MS30017E43W344 04NOSA1-ND	6MS30017E43W344 04NOSA1	Infineon Technologies	View more Series: ModSTACK HD 3 Part Status: Active Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 4280A Power - Max: 32300W Input: Standard NTC Thermistor: Yes Operating Temperature: -25C ~ 55C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $22.68
IRG5K100HH06E-N D	IRG5K100HH06E	Infineon Technologies	View more Part Status: Obsolete Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 170A Power - Max: 405W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 6.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR ECO 2 Module Supplier Device Package: POWIR ECO 2	1000 Order	1+: $0
DF200R12W1H3FB1 1BPSA1-ND	DF200R12W1H3FB1 1BPSA1	Infineon Technologies	View more Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
PTFA241301EV1-N D	PTFA241301E V1	Infineon Technologies	View more Series: GOLDMOS Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.42GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10A Current - Test: 1.15A Power - Output: 130W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-30260-2	1000 Order	1+: $0
PTFA192001EV4XW SA1TR-ND	PTFA192001EV4XW SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: LDMOS Frequency: 1.99GHz Gain: 15.9dB Voltage - Test: 30V Current Rating: 10A Current - Test: 1.8A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36260-2 Base Part Number: PTFA192001	1000 Order	1+: $0
IRLL2703TRPBFTR -ND	IRLL2703TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	2500 Order	--
BCV62AE6327HTSA 1TR-ND	BCV62AE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BCV62	12000 Order	3000+: $0.0576 6000+: $0.0518 15000+: $0.046 30000+: $0.0432 75000+: $0.0384
BFP720FH6327XTS A1TR-ND	BFP720FH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain: 10.5dB ~ 28dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP720	1000 Order	3000+: $0.1143
BCR521E6327HTSA 1TR-ND	BCR521E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCR521	1000 Order	18000+: $0.0298

< 225 226 227 228 229 >

Hot Searches: infineon embedded microprocessor embedded microprocessor aries embedded microprocessor beacon embedded microprocessor becom embedded microprocessor key embedded microprocessor dave embedded microprocessor digital embedded microprocessor dlp embedded microprocessor enclustra embedded microprocessor freescale embedded microprocessor future embedded microprocessor ghi embedded microprocessor harris embedded microprocessor intel embedded microprocessor lantic embedded microprocessor lantronix embedded microprocessor microchip embedded microprocessor motorola embedded microprocessor myir embedded microprocessor

Search Result:infineon embedded microprocessor

Related Categories