IPP120N08S403AKSA1 Allicdata Electronics
Allicdata Part #:

IPP120N08S403AKSA1-ND

Manufacturer Part#:

IPP120N08S403AKSA1

Price: $ 3.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO220-3
More Detail: N-Channel 80V 120A (Tc) 278W (Tc) Through Hole PG-...
DataSheet: IPP120N08S403AKSA1 datasheetIPP120N08S403AKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 3.22560
10 +: $ 2.88162
100 +: $ 2.36269
500 +: $ 1.91321
1000 +: $ 1.61355
Stock 1000Can Ship Immediately
$ 3.58
Specifications
Vgs(th) (Max) @ Id: 4V @ 223µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 278W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP120N08S403AKSA1 is a single MOSFET which belongs to the family of transistors. MOSFET stands for metal-oxide semiconductor field-effect transistor, and it is a voltage-controlled semiconductor device. Generally, it consists of two semiconductor regions separated by an insulator layer. The two regions are semiconductor source and semiconductor drain. In this article, we will discuss the application field and working principle of the IPP120N08S403AKSA1.

The IPP120N08S403AKSA1 is a logic level MOSFET with a drain-source voltage of up to 120V, a maximum drain current of up to 8A and a maximum drain-source on-state resistance of down to 0.35Ω. It also has a built-in source-drain diode that can handle high peak reverse voltage ratings. It is suitable for a wide range of applications such as motor control and switching, lighting, DC-DC power converter, and motor controller. Moreover, it is suitable for low-frequency inverter and power factor correction.

Regarding its working principle, the main function of the IPP120N08S403AKSA1 is to be an electronic switch between the source and the drain. The current flowing through the drain to the source is controlled by the gate-source voltage (Vgs). When the gate-source voltage is increased, the current flowing through the device increases significantly. Alternatively, if the gate-source voltage is decreased, the current flowing through the device is reduced significantly. When the voltage is zero, the current flowing is closed off, making the MOSFET an ideal switch. It is also important to note that the IPP120N08S403AKSA1 is a unipolar device, meaning that it conducts in one direction only.

The IPP120N08S403AKSA1 has many advantages over other transistors such as its low on-resistance, low gate drive and its fast switching speed. Additionally, its construction is unipolar which makes the device very reliable in applications where a single power source is used. The IPP120N08S403AKSA1 is also able to handle high peak reverse voltage ratings, thus making it suitable for use in applications such as motor control and switching, lighting, and DC-DC power converter.

In conclusion, the IPP120N08S403AKSA1 is a single MOSFET device with many advantages such as its low on-resistance and fast switching speed. It is suitable for applications such as motor control and switching, lighting, DC-DC power converter, and motor controllers. Its main function is to be an electronic switch between the source and the drain, and it is a unipolar device, meaning it only conducts in one direction. It has the ability to handle high peak reverse voltage ratings and it is also very reliable in applications where a single power source is used. Therefore, it is a very useful device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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