IPD046N08N5ATMA1 Allicdata Electronics
Allicdata Part #:

IPD046N08N5ATMA1-ND

Manufacturer Part#:

IPD046N08N5ATMA1

Price: $ 0.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 90A TO252-3
More Detail: N-Channel 80V 90A (Tc) 125W (Tc) Surface Mount PG-...
DataSheet: IPD046N08N5ATMA1 datasheetIPD046N08N5ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.65003
Stock 1000Can Ship Immediately
$ 0.72
Specifications
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD046N08N5ATMA1 is a depletion mode MOSFET (metal oxide semiconductor field-effect transistor) designed to be used in discriminating situations where static control of the circuit is desired. The device works by controlling current and voltage flow. There are several application fields where this type of transistor excels.

First, IPD046N08N5ATMA1 can be used in power applications. Since the device is a depletion mode MOSFET, it can be used as a switching element. With the ability to control current and voltage by simply changing drain-source voltage and gate voltage, this transistor can be used to switch DC motors, solenoids, and other similar loads. In addition, the device can be used as a driver for relays, LEDs, and other inductive and resistive loads due to its high frequency switching capabilities.

Another application field for the IPD046N08N5ATMA1 is in low-noise circuitry. The low-noise design allows this device to be used in audio amplifiers and systems, as well as in other electronic systems where noise reduction is important. Also, MOSFETs have high input resistance, which makes them attractive in high-frequency applications such as radio frequency amplifiers, transmitters, and receivers.

The working principle of the IPD046N08N5ATMA1 is simple. A source and drain are formed in a semiconductor material, such as silicon. When a voltage is applied to the gate, it creates an electric field which repels electrons near the surface of the semiconductor material. This repulsion of electrons creates a depletion layer in the semiconductor material which acts as an insulator and prevents current flow. Changing the voltage of the gate can alter the width of this depletion layer and thus control the amount of current flowing through the transistor.

In conclusion, the IPD046N08N5ATMA1 is an incredibly versatile depletion mode MOSFET, perfect for use in situations where precise control of current and voltage is required. It has a variety of applications, including power electronics, low-noise circuitry, and radio frequency applications. Its unique operation is simple and easy to understand, making it a valuable tool for any design engineer. Its versatility and ease of use make it a great choice for any application where precise control is desired.

The specific data is subject to PDF, and the above content is for reference

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