Allicdata Part #: | IRFI3306GPBF-ND |
Manufacturer Part#: |
IRFI3306GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 71A TO220 |
More Detail: | N-Channel 60V 71A (Tc) 46W (Tc) Through Hole TO-22... |
DataSheet: | IRFI3306GPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4685pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 43A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 71A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFI3306GPBF is a type of power MOSFET that is capable of high performance and high current switching. It is designed for use in a variety of applications, from mobile communication to high power computing. In this article, we will discuss the application field and working principle of the IRFI3306GPBF.
The IRFI3306GPBF is a high performance and high current switching power MOSFET. It is designed for use in applications that require higher power, higher currents and higher performance. This MOSFET is suitable for mobile communications, power electronics, high power computing, robotics and other applications that require high performance and high current switching. The IRFI3306GPBF is manufactured using advanced technology and features a low-voltage drop and high-current ratings with excellent power density.
The IRFI3306GPBF is a single gate MOSFET, meaning that it consists of only one gate, which is used to control the flow of current by creating an electrical insulation between the source and the drain terminals. This MOSFET is made out of silicon, which is a semiconductor material, and has two source terminals and one drain terminal. The source terminals are connected to the gate, and the drain terminal is connected to the body, which is connected to the source.
The working principle of the IRFI3306GPBF is based on the control of the current flow between the source and the drain terminals. The electric charge of the gate controls the flow of current in the MOSFET. When the gate is charged, a depletion region is created, which acts as an insulator and prevents the current from flowing. When the gate is discharged, the insulation breaks down, allowing the current to flow.
The IRFI3306GPBF has a maximum drain-source voltage rating of 20V and a maximum drain current of 90A. It also has a maximum power dissipation rating of 2W and an operating temperature range of -55°C to 150°C. The on-resistance of the MOSFET is typically around 0.4Ω, which makes it ideal for high-efficiency applications.
The IRFI3306GPBF can be used in a variety of applications, from mobile communication to high power computing. It is suitable for use in power management circuits, DC / DC converters, inverters, and other applications that require high performance and high current switching. Additionally, it can be used in automotive powertrain applications, such as fuel injection, ignition and spark plug control, as well as in lighting and electronic control units.
In summary, the IRFI3306GPBF is a power MOSFET that is capable of high performance and high current switching. It is designed for use in applications that require higher power, higher currents and higher performance. Its single gate design makes it ideal for use in a variety of applications, such as mobile communications, power electronics, high power computing, robotics and other applications that require high performance and high current switching. It has a maximum drain-source voltage rating of 20V and a maximum drain current of 90A, and its on-resistance is typically around 0.4Ω, making it ideal for high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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