IRFI3306GPBF Allicdata Electronics
Allicdata Part #:

IRFI3306GPBF-ND

Manufacturer Part#:

IRFI3306GPBF

Price: $ 1.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 71A TO220
More Detail: N-Channel 60V 71A (Tc) 46W (Tc) Through Hole TO-22...
DataSheet: IRFI3306GPBF datasheetIRFI3306GPBF Datasheet/PDF
Quantity: 1000
1 +: $ 1.40000
10 +: $ 1.35800
100 +: $ 1.33000
1000 +: $ 1.30200
10000 +: $ 1.26000
Stock 1000Can Ship Immediately
$ 1.4
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFI3306GPBF is a type of power MOSFET that is capable of high performance and high current switching. It is designed for use in a variety of applications, from mobile communication to high power computing. In this article, we will discuss the application field and working principle of the IRFI3306GPBF.

The IRFI3306GPBF is a high performance and high current switching power MOSFET. It is designed for use in applications that require higher power, higher currents and higher performance. This MOSFET is suitable for mobile communications, power electronics, high power computing, robotics and other applications that require high performance and high current switching. The IRFI3306GPBF is manufactured using advanced technology and features a low-voltage drop and high-current ratings with excellent power density.

The IRFI3306GPBF is a single gate MOSFET, meaning that it consists of only one gate, which is used to control the flow of current by creating an electrical insulation between the source and the drain terminals. This MOSFET is made out of silicon, which is a semiconductor material, and has two source terminals and one drain terminal. The source terminals are connected to the gate, and the drain terminal is connected to the body, which is connected to the source.

The working principle of the IRFI3306GPBF is based on the control of the current flow between the source and the drain terminals. The electric charge of the gate controls the flow of current in the MOSFET. When the gate is charged, a depletion region is created, which acts as an insulator and prevents the current from flowing. When the gate is discharged, the insulation breaks down, allowing the current to flow.

The IRFI3306GPBF has a maximum drain-source voltage rating of 20V and a maximum drain current of 90A. It also has a maximum power dissipation rating of 2W and an operating temperature range of -55°C to 150°C. The on-resistance of the MOSFET is typically around 0.4Ω, which makes it ideal for high-efficiency applications.

The IRFI3306GPBF can be used in a variety of applications, from mobile communication to high power computing. It is suitable for use in power management circuits, DC / DC converters, inverters, and other applications that require high performance and high current switching. Additionally, it can be used in automotive powertrain applications, such as fuel injection, ignition and spark plug control, as well as in lighting and electronic control units.

In summary, the IRFI3306GPBF is a power MOSFET that is capable of high performance and high current switching. It is designed for use in applications that require higher power, higher currents and higher performance. Its single gate design makes it ideal for use in a variety of applications, such as mobile communications, power electronics, high power computing, robotics and other applications that require high performance and high current switching. It has a maximum drain-source voltage rating of 20V and a maximum drain current of 90A, and its on-resistance is typically around 0.4Ω, making it ideal for high-efficiency applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRFI" Included word is 40
Part Number Manufacturer Price Quantity Description
IRFI4212H-117P Infineon Tec... -- 998 MOSFET 2N-CH 100V 11A TO-...
IRFI640GPBF Vishay Silic... -- 894 MOSFET N-CH 200V 9.8A TO2...
IRFI4024H-117P Infineon Tec... -- 1000 MOSFET 2N-CH 55V 11A TO-2...
IRFIB7N50A Vishay Silic... -- 1000 MOSFET N-CH 500V 6.6A TO2...
IRFIZ24E Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 14A TO220...
IRFI9530G Vishay Silic... -- 1000 MOSFET P-CH 100V 7.7A TO2...
IRFI520G Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 7.2A TO2...
IRFI630G Vishay Silic... -- 1000 MOSFET N-CH 200V 5.9A TO2...
IRFIZ48N Infineon Tec... -- 1000 MOSFET N-CH 55V 36A TO220...
IRFI540G Vishay Silic... -- 1000 MOSFET N-CH 100V 17A TO22...
IRFI620GPBF Vishay Silic... -- 908 MOSFET N-CH 200V 4.1A TO2...
IRFI9Z14G Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 5.3A TO22...
IRFI734GPBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 450V 3.4A TO2...
IRFI840G Vishay Silic... -- 1000 MOSFET N-CH 500V 4.6A TO2...
IRFIBC40GLC Vishay Silic... -- 1000 MOSFET N-CH 600V 3.5A TO2...
IRFIB6N60APBF Vishay Silic... 3.35 $ 68 MOSFET N-CH 600V 5.5A TO2...
IRFI1010NPBF Infineon Tec... -- 3790 MOSFET N-CH 55V 49A TO220...
IRFIB5N65APBF Vishay Silic... 3.03 $ 260 MOSFET N-CH 650V 5.1A TO2...
IRFIBE20G Vishay Silic... -- 1000 MOSFET N-CH 800V 1.4A TO2...
IRFIZ44NPBF Infineon Tec... -- 2998 MOSFET N-CH 55V 31A TO220...
IRFI4019HG-117P Infineon Tec... -- 1000 MOSFET 2N-CH 150V 8.7A TO...
IRFI9Z14GPBF Vishay Silic... -- 1000 MOSFET P-CH 60V 5.3A TO22...
IRFI7446GPBF Infineon Tec... 0.73 $ 1000 MOSFET N-CH 40V 80AN-Chan...
IRFI644GPBF Vishay Silic... -- 124 MOSFET N-CH 250V 7.9A TO2...
IRFI3306GPBF Infineon Tec... -- 1000 MOSFET N-CH 60V 71A TO220...
IRFI4020H-117P Infineon Tec... 2.63 $ 396 MOSFET 2N-CH 200V 9.1A TO...
IRFI640G Vishay Silic... -- 1000 MOSFET N-CH 200V 9.8A TO2...
IRFI9640G Vishay Silic... -- 1000 MOSFET P-CH 200V 6.1A TO2...
IRFI4905 Infineon Tec... -- 1000 MOSFET P-CH 55V 41A TO-22...
IRFI9Z34GPBF Vishay Silic... -- 1000 MOSFET P-CH 60V 12A TO220...
IRFI4229PBF Infineon Tec... -- 2716 MOSFET N-CH 250V 19A TO-2...
IRFI1310NPBF Infineon Tec... -- 2242 MOSFET N-CH 100V 24A TO22...
IRFI4410ZGPBF Infineon Tec... -- 1000 MOSFET N-CH 100V 43A TO22...
IRFIBC30GPBF Vishay Silic... -- 1065 MOSFET N-CH 600V 2.5A TO2...
IRFIZ24GPBF Vishay Silic... 1.43 $ 410 MOSFET N-CH 60V 14A TO220...
IRFI2807 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 75V 40A TO220...
IRFIZ24EPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 14A TO220...
IRFI734G Vishay Silic... -- 1000 MOSFET N-CH 450V 3.4A TO2...
IRFIB7N50LPBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 500V 6.8A TO2...
IRFI820GPBF Vishay Silic... -- 270 MOSFET N-CH 500V 2.1A TO2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics