IPI80N08S406AKSA1 Allicdata Electronics
Allicdata Part #:

IPI80N08S406AKSA1-ND

Manufacturer Part#:

IPI80N08S406AKSA1

Price: $ 1.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO262-3
More Detail: N-Channel 80V 80A (Tc) 150W (Tc) Through Hole PG-T...
DataSheet: IPI80N08S406AKSA1 datasheetIPI80N08S406AKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 1.00809
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Vgs(th) (Max) @ Id: 4V @ 90µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPI80N08S406AKSA1 is a type of field-effect transistor (FET) used in many devices and circuits. It is classified as a single metal-oxide-semiconductor FET (MOSFET). The device is used as an electronic switch for controlling current flow in devices and circuits.

A field-effect transistor works by controlling an electric field near a gate. This gate is an insulated layer of a semiconductor material, usually silicon. When the gate voltage is applied, electrons are attracted to the gate and create a conductive channel. This channel is an effective switch, allowing current to pass through when it is in its "on" state.

The IPI80N08S406AKSA1 works as a three-terminal device with a gate, source and drain. A voltage applied to the gate will cause a current to flow through the channel established between the source and drain. Depending on the type of device, the gate voltage may be positive to turn on the device or negative to turn it off.

The device is a type of metal-oxide-semiconductor FET (MOSFET). It has an insulated gate electrode and source and drain regions which are separated by a layer of insulating material. This insulating layer is what gives the device its excellent electrical characteristics, in particular its extremely low on-state resistance.

The device can be used in many different applications, such as switching and power control, motor control, current regulation and light dimming. It can be used to control the power delivered to a load, such as a motor or light bulb. It can also be used to provide protection against over-voltage, over-current and over-temperature.

The IPI80N08S406AKSA1 is designed to operate over an extended temperature range of -55°C to +150°C. It has a low on-state resistance of 6.0 mΩ, a low gate charge of 3.2 nC and a high gate threshold voltage of 4.6 V.

The IPI80N08S406AKSA1 is a versatile device and can be used in a variety of applications. It is easy to mount in various configurations and its features can be tailored for specific applications. The device is reliable and robust, making it an ideal choice for many different applications that require superior performance.

The specific data is subject to PDF, and the above content is for reference

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