SIPC18N50C3X1SA1

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SIPC18N50C3X1SA1 is a high current, high voltage transistor from the SiPC series. It is used for various applications in industrial, automotive, telecommunications and home appliances. The SiPC series transistors provide reliable, high-performance switching and linear control for demanding applications.

The SIPC18N50C3X1SA1 comprises a p-channel MOSFET. It is suitable for high-side switching up to 100 V and offers a total gate charge of 4.55 nC. The device also exhibits a low on-resistance, guaranteed to be less than or equal to 1.2 mΩ in the off state. This feature is beneficial in reducing power losses while providing improved thermal performance and long-term reliability.

The device is offered in a TO-220 package with a high temperature, 225 ˚C, maximum junction temperature. The SIPC18N50C3X1SA1 is designed for operation in surface mount, through-hole and tape & reel assemblies. It is also ideal for automotive applications due to its RoHS compliant and leads-free design.

The working principle of the SIPC18N50C3X1SA1 is based on the principle of electricity conduction. When a positive voltage is applied to the gate, it attracts electrons from the source and decreases the resistance between source and drain. This allows current to flow from source to drain and the transistor will be in an on state. If reverse voltage across the gate is applied, the device will be in an off state. The gate voltage and current control the drain to source current which makes the SIPC18N50C3X1SA1 a suitable power switch device.

In addition to its suitability for various applications, the SIPC18N50C3X1SA1 transistor is also suitable for high thermal applications due to its low on-resistance. This feature makes it ideal for high-power switching, such as in power amplifier circuitry.

The SIPC18N50C3X1SA1 transistor is constructed in an all-floating-isolation metal oxide semiconductor field-effect transistor (MOSFET) configuration. This configuration is suitable for high power applications and provides robust switching characteristics. The device is also equipped with an electrostatic discharge (ESD) protection diode to protect against electric overstress (EOS).

In summary, the SIPC18N50C3X1SA1 transistor is a reliable, high-performance transistor suitable for industrial, automotive, telecommunications and home appliance applications. It is suitable for high thermal applications due to its low on-resistance and is designed for operation in surface mount, through-hole and tape & reel assemblies. The device’s construction is based on the principle of electricity conduction and its internal diode allows for robust ESD protection. The SIPC18N50C3X1SA1 is the ideal choice for high-power switching in power amplifier circuitry.

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