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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
BSC025N03MSGATM A1TR-ND	BSC025N03MSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Ta). 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 15V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.3502
IPD50P03P4L11AT MA1TR-ND	IPD50P03P4L11AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 85A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V Power Dissipation (Max): 58W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFH5250DTRPBFT R-ND	IRFH5250DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150A Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6115pF @ 13V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	1000 Order	--
IKW20N60TAFKSA1 -ND	IKW20N60TAFKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Power - Max: 166W Switching Energy: 770J Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25C: 18ns/199ns Test Condition: 400V, 20A, 12 Ohm, 15V Reverse Recovery Time (trr): 41ns Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Base Part Number: *KW20N60	1000 Order	240+: $2.0149
IRF7424PBFTR-ND	IRF7424TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
BSC520N15NS3GAT MA1TR-ND	BSC520N15NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 35A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 75V Power Dissipation (Max): 57W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.4074
IRFR2905ZPBFTR- ND	IRFR2905ZTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	4000 Order	2000+: $0.3234
AUIRFR5410TRLTR -ND	AUIRFR5410TRL	Infineon Technologies	View more Series: Automotive, AEC-Q101, HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRLH5030TRPBFTR -ND	IRLH5030TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 50V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	--
IRF6636TRPBFTR- ND	IRF6636TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 18A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET ST Package / Case: DirectFET Isometric ST	1000 Order	--
AUIRLR3410TR-ND	AUIRLR3410TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IKQ75N120CT2XKS A1-ND	IKQ75N120CT2XKS A1	Infineon Technologies	View more Series: TrenchStop Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Power - Max: 938W Switching Energy: 6.7mJ (on), 4.1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25C: 37ns/328ns Test Condition: 600V, 75A, 6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	1000 Order	240+: $7.4566
BBY5302VH6327XT SA1TR-ND	BBY5302VH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio: 2.6 Capacitance Ratio Condition: C1/C3 Voltage - Peak Reverse (Max): 6V Diode Type: Single Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Base Part Number: BBY53	3000 Order	3000+: $0.0918 6000+: $0.0862 15000+: $0.0807 30000+: $0.0742
IRGR4607DTRPBFT R-ND	IRGR4607DTRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140J (on), 62J (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25C: 27ns/120ns Test Condition: 400V, 1.5A, 100 Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA)	1000 Order	1+: $0
IRF7467-ND	IRF7467	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF3515STRR-ND	IRF3515STRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL1104STRR-ND	IRL1104STRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SI4420DYTR-ND	SI4420DYTR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFZ44VS-ND	IRFZ44VS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1812pF @ 25V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFR13N15DTRL-N D	IRFR13N15DTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPU09N03LAGIN-N D	IPU09N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
SPP04N60C3HKSA1 -ND	SPP04N60C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 200A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IRF7220PBFTR-ND	IRF7220TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRL3803LPBF-ND	IRL3803LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
CHL8103-19CRT-N D	CHL8103-19CRT	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IR2108SPBFTR-ND	IR2108STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: IR2108SPBF	5000 Order	--
IR2109PBF-ND	IR2109PBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Base Part Number: IR2109PBF	2359 Order	--
IR2118PBF-ND	IR2118PBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Base Part Number: IR2118PBF	3000 Order	--
IR7106STRPBFTR- ND	IR7106STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 700V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	1000 Order	2500+: $0.394
IRS2453DSPBF-ND	IRS2453DSPBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 4 Gate Type: N-Channel MOSFET Voltage - Supply: 10 V ~ 15.6 V Logic Voltage - VIL, VIH: 4.7V, 9.3V Current - Peak Output (Source, Sink): 180mA, 260mA Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 120ns, 50ns Operating Temperature: -25C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC Base Part Number: IRS2453DSPBF	756 Order	1+: $1.3923 10+: $1.248 100+: $1.0033 500+: $0.8243 1000+: $0.683
IR2181SPBF-ND	IR2181SPBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: IR2181SPBF	87 Order	--
IRS44262STRPBF- ND	IRS44262STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 11.2 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 2.3A, 3.3A Input Type: Inverting Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: IRS4426	1000 Order	--
AUIRS21281S-ND	AUIRS21281S	Infineon Technologies	View more Series: Automotive, AEC-Q100 Packaging: Tube Part Status: Obsolete Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 9 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: AUIRS21281S	1000 Order	1+: $0
AUIRS2191S-ND	AUIRS2191S	Infineon Technologies	View more Series: Automotive, AEC-Q100 Packaging: Tube Part Status: Obsolete Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 3.5A, 3.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: AUIRS2191S	1000 Order	--
ICE2AS01-ND	ICE2AS01	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Output Isolation: Isolated Internal Switch(s): No Topology: Flyback Voltage - Start Up: 13.5V Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V Duty Cycle: 72% Frequency - Switching: 100kHz Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Control Features: Soft Start Operating Temperature: -40C ~ 150C (TJ) Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: PG-DIP-8 Mounting Type: Through Hole Base Part Number: ICE2AS01	1000 Order	--
ICE2B0565FKLA1- ND	ICE2B0565FKLA1	Infineon Technologies	View more Series: CoolSETF2 Packaging: Tube Part Status: Obsolete Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback Voltage - Start Up: 13.5V Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V Duty Cycle: 72% Frequency - Switching: 67kHz Power (Watts): 23W Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Control Features: Soft Start Operating Temperature: -40C ~ 150C (TJ) Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: PG-DIP-8 Mounting Type: Through Hole Base Part Number: ICE2B0565	1000 Order	1+: $0
TLE42994GMXUMA3 -ND	TLE42994GMXUMA3	Infineon Technologies	View more Series: Automotive, AEC-Q100 Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 5V Voltage Dropout (Max): 0.5V @ 100mA Current - Output: 150mA Current - Quiescent (Iq): 1A Current - Supply (Max): 2mA PSRR: 66dB (100Hz) Control Features: Enable, Reset Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-14	1000 Order	2500+: $0.5738
TLE4251GATMA1-N D	TLE4251GATMA1	Infineon Technologies	View more Series: Automotive, AEC-Q100 Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): Tracking Voltage Dropout (Max): 0.52V @ 300mA Current - Output: 400mA Current - Quiescent (Iq): 300A Current - Supply (Max): 20mA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-11	1000 Order	1000+: $0.7751
IRU1206-33CD-ND	IRU1206-33CD	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.65V @ 1A Current - Output: 1A Current - Quiescent (Iq): 3mA Current - Supply (Max): 50mA Protection Features: Over Current, Over Temperature Operating Temperature: 0C ~ 125C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Base Part Number: IRU1206-33CD	1000 Order	1+: $0
TLE7270DNTMA1TR -ND	TLE7270DNTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage Dropout (Max): 0.5V @ 200mA Current - Output: 300mA Current - Quiescent (Iq): 30A Current - Supply (Max): 40A PSRR: 60dB (100Hz) Control Features: Delay, Reset Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: P-TO252-5 Base Part Number: TLE7270	1000 Order	1+: $0

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