BTS282Z E3180A Discrete Semiconductor Products

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The BTS282Z E3180A is a single enhancement mode Field Effect Transistor (FET). It is a popular transistor used in Power Management, switching and Load Drivers applications. The BTS282Z is a type of P-channel Drain Opening FET (D-FET), which is a distinct semiconductor device that allows voltage to be regulated in a conductor circuit using negative charges. The BTS282Z features excellent electrical characteristics and improved thermal design. It is created with top-quality materials and advanced process technologies in order to ensure reliable performance and extended service life.

The main characteristic of the BTS282Z is its ability to control the flow of voltage on a conductor. This is done by creating a "gate" that is located between the source and the drain in the transistor. When the gate is activated, electrons can flow through the transistor, allowing electricity to pass through the circuit. When the gate is not activated, the electrons are blocked and no electricity can pass through. This transistor can be used for high-frequency, high-efficiency operations.

The BTS282Z is ideal for applications such as power management and switching. It is capable of handling peak current levels up to 3.2A, and is able to maintain its peak current levels over a wide temperature range. Additionally, it has a low gate charge, meaning that it can quickly respond to voltage and current signals. The low gate charge also helps minimize power loss and noise. This makes it an excellent choice for power management applications, as it is able to control a high amount of power without wasting energy.

The BTS282Z is also a great choice for load applications. It is designed to efficiently control inductive loads, and its fast switching times make it great for high-frequency, high-speed operations. Additionally, its drain-source saturation voltage (Vds) is very low, which helps reduce power loss and power dissipation.

The BTS282Z is a robust, reliable and efficient transistor which is suitable for a wide variety of power management, switching and load driver applications. It features excellent electrical characteristics, low gate charge and a low drain-source saturation voltage. This makes it a great choice for high-frequency, high-efficiency operations. Additionally, its thermal design ensures reliable performance and extended service life.

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