IPP60R080P7XKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R080P7XKSA1-ND

Manufacturer Part#:

IPP60R080P7XKSA1

Price: $ 4.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 37A TO220-3
More Detail: N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-...
DataSheet: IPP60R080P7XKSA1 datasheetIPP60R080P7XKSA1 Datasheet/PDF
Quantity: 433
1 +: $ 3.91230
10 +: $ 3.49146
100 +: $ 2.86278
500 +: $ 2.31815
1000 +: $ 1.95506
Stock 433Can Ship Immediately
$ 4.31
Specifications
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 129W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 400V
Vgs (Max): ±20V
Series: CoolMOS™ P7
Vgs(th) (Max) @ Id: 4V @ 590µA
Rds On (Max) @ Id, Vgs: 80 mOhm @ 11.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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IPP60R080P7XKSA1 Application Field and Working Principle

The IPP60R080P7XKSA1 is a fast, powerful and low-resistance insulated gate bipolar transistor (IGBT) developed by Infineon Technologies AG. It is mainly used in applications such as motor drives, frequency conversion power supplies, automotive power modules and industrial power modules.

The IPP60R080P7XKSA1 utilizes the advantages of both bipolar transistors and field effect transistors (FETs). It has a P-channel FET as the main switching element and an NPN power bipolar transistor as the secondary switching element. The P-channel FET conducts when a gate voltage is applied, allowing current to flow through it. The NPN power bipolar transistor is connected in the emitter-collector leg of the P-channel FET. When a voltage is applied to the base control terminal of the NPN power bipolar transistor, current can flow through the emitter-collector leg of the P-channel FET and, thus, through the channel of the IGBT.

When the IGBT is on, the voltages at both its emitter and collector terminals are exactly equal. This will be beneficial for power applications, as it holds the drop across the device to a minimum. The IGBT also features a low Gate Threshold Voltage (VGT), which makes it suitable for high frequency applications. The IPP60R080P7XKSA1 also features a low VCE (sat) value, which allows for high power output with a minimum voltage drop.

The IPP60R080P7XKSA1 also features a temperature-independent Switching Characteristic Curve (SCC) with a maximum junction temperature of 175°C. This allows it to withstand high temperatures and high power outputs without any deterioration in performance. The device also features a high gate charge (Qg) value, which allows it to be used in high-current applications with low losses.

The device is suitable for applications such as motor drives, frequency conversion power supplies, automotive power modules and industrial power modules. It can be used in applications such as AC inverters, DC-DC converters and motor controllers. Additionally, it can be used in various other applications, such as Uninterruptible Power Supplies (UPS), welding machines and HVAC equipment.

The IPP60R080P7XKSA1 has many advantages compared to conventional IGBTs. It features a low on-state voltage drop (VCE (sat)); it has a low switching frequency (fsw); it features a low gate charge (Qg); and it has a low noise level. Additionally, it has a high DC saturation current (IDS(sat)), a high forward current transfer ratio (hFE), and a low junction temperature (Tj). All these characteristics make it an ideal choice for applications that require high-performance, reliable, and efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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