IPD034N06N3GATMA1

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IPD034N06N3GATMA1 is an isolated N-channel enhancement mode Field- Effect Transistor (FET) that is widely used in switching applications.

Application Field

IPD034N06N3GATMA1 transistors are most suitable for applications requiring low on-state resistance, high switching speeds and high breakdown voltage. Usually, these transistors are used in mobile phone applications, switching power supplies, motor control and HVAC systems. They are also newer picked up in automotive applications, due to their high efficiency, thermal robustness and lower Gate threshold voltage.

IPD034N06N3GATMA1 transistors are also used in low-side and high-side switch configurations, such as Mosfet bridge. This bridge circuit can be used to control high current loads with low voltage supply, such as 12V fans using 6V source, or H Bridge motor driver circuits. This configuration also greatly lowers EMI and reduces interference.

Working Principle

The working principle of IPD034N06N3GATMA1 is based on the principle of enhancement type MOSFETS. As the name suggests, in this kind of MOSFET, the “base current” is at a minimum for a given voltage. In other words, only a very small current is needed to create a low resistance channel between the Source and the Drain. This is because the Gate and Source are insulated from each other.

When the voltage at the Gate is lower than the source voltage, no current flows in the transistor, and it acts as an insulator. When the voltage at the Gate is higher than the source voltage, a conducting channel is created between the Source and the Drain, and current can flow. This is the basic working principle of IPD034N06N3GATMA1.

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