Allicdata Part #: | IRFS3607PBF-ND |
Manufacturer Part#: |
IRFS3607PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 80A D2PAK |
More Detail: | N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2P... |
DataSheet: | IRFS3607PBF Datasheet/PDF |
Quantity: | 1558 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRFS3607PBF is a type of single power field-effect transistor (FET) that is produced using high cell density, and is especially designed for applications where low gate charge and low on-resistance are required. It belongs to the family of VISHAY siliconix N-Channel enhancement mode power transistors.
The IRFS3607PBF can be used in applications such as Load switch, USB programming, Battery management and protection, Switching power supplies, DC-DC converters, Battery chargers, and many more. It is best suited for various portable and mobile devices such as laptops, tablets, and smart phones. This power transistor is fully compatible with all standard logic and analog ICs.
The fabrication of IRFS3607PBF is mainly done on a highly reliable silicon bulk and is fabricated by using an advanced production process, which includes advanced lithography, ion implantation, and step coverage techniques. This transistor can also be used in applications requiring fast switching and low gate-to-source capacitance. Additionally, the IRFS3607PBF has a number of other features such as a low voltage gate threshold that ensures very low power dissipation, and a low on-resistance of 1.2 mΩ for a maximum drain current of 12 A in an SO-8 package.
In terms of operation, the IRFS3607PBF is a junction insulated side fet that has a P-N junction in the source region and an insulated gate. The gate is biased with a positive voltage compared to the source to turn the transistor on. The on-resistance of the transistor is determined by the voltage that is applied to the gate. The more positive the voltage to the gate, the lower the on-resistance of the transistor.
When in its on state, the IRFS3607PBF has very low gate-to-drain and gate-to-source capacitances, which helps to decrease switching losses. Moreover, due to its high voltage blocking capability and low turn-on resistance, it is suitable for use in DC-DC converters, where it can be used as an efficient switch for voltage regulation and power management. It can also be used in USB programming applications such as USB hubs and USB charging.
In conclusion, the IRFS3607PBF has a number of features and characteristics that make it an ideal choice for a number of applications. It has low gate-to-source and gate-to-drain capacitances, low on-resistance, and can provide a high voltage blocking capability. All this, combined with its compatibility with various logic and analog ICs, makes it a suitable choice for load switching, USB programming, power supplies, DC-DC converters and many more applications.
The specific data is subject to PDF, and the above content is for reference
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