
Allicdata Part #: | IRF5803D2-ND |
Manufacturer Part#: |
IRF5803D2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 40V 3.4A 8-SOIC |
More Detail: | P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 112 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF5803D2 is a type of single metal-oxide-semiconductor field effect transistor (MOSFET). MOSFETs are specialized types of transistors, able to switch large currents and regulate the voltage for a wide range of applications. The IRF5803D2 MOSFET is an high-performance, low-power N-channel insensitive device and it belongs to the IRF580x family of MOSFETs.
The IRF5803D2 is designed specifically to handle higher currents, making it suitable for a variety of applications, including high-power switching, battery management, motor control, and power amplification. The device’s compact size and low on-resistance ratings make it an efficient choice in applications where power consumption and board space is limited.
The IRF5803D2 is built with a low voltage threshold and a high peak current rating. It is an unregulated field-effect transistor with the following features:
- Max gate threshold of about 3.2V for proper operation
- Rated for up to 75A peak current and 360A continuous current
- Low on-resistance rating of just 7.8mΩ
- On-resistance tolerance from 5.6mΩ to 9.8mΩ maximum
- Excellent thermal performance with a maximum junction temperature of 175°C
- Lifetime warranty
The IRF5803D2 works by using an N-channel design to pass a current between Source and Drain. The device is composed of a substrate which is typically silicon or a similar semiconductor, and a Source, Drain, and Gate region. Current flow is regulated using the Gate voltage, and when a voltage is applied to the Gate the device switches “on”, allowing current to flow. When the voltage is removed, the device switches “off”, stopping the current.
The switching speed of the IRF5803D2 is dependent on the capacitive load of the circuit. The device is able to switch at speeds of up to 10MHz, making it ideal for applications that require a fast response time.
The IRF5803D2 is an efficient, cost effective solution for power switching, amplification, and motor control applications. Its high peak current rating, low on-resistance, and excellent thermal performance make the IRF5803D2 a great option for applications where power consumption and board space is limited.
The specific data is subject to PDF, and the above content is for reference
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