IRFR3707ZPBF

Vgs(th) (Max) @ Id:	2.25V @ 25µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1150pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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Introduction

IRFR3707ZPBF is a power MOSFET manufactured by Infineon Technologies. This device is a N-channel enhancement-mode MOSFET developed for precision power control applications. This advanced MOSFET features low on-state resistance and offers a wide range of performance options. The device is capable of providing a low power dissipation, large current capability and excellent robustness. This device offers excellent switching performance, flexibility in designing and usability for power control applications.

Application Field of IRFR3707ZPBF

The main application field of IRFR3707ZPBF is in motor control, such as driving motors of industrial machinery, robotic actuators, and HVAC (heating and cooling) systems. The device can also be used in automotive applications such as electronic power steering and electric pumps. Moreover, IRFR3707ZPBF can be used in renewable energy and solar energy systems, in applications that require high efficiency, like the switching of IGBTs (Insulated Gate Bipolar Transistors). Besides, the device is also suitable for high current switching applications in consumer electronics, e.g. consumer devices like LCDs, LED, set-top boxes, etc.

Working Principle of IRFR3707ZPBF

IRFR3707ZPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor), a type of transistor that uses an insulated gate to control the flow of electrons between the source and drain terminals. It is considered one of the most efficient and reliable transistors for controlling and power management. The IRFR3707ZPBF comes with an N-type MOSFET structure, which means it can conduct electricity in both directions. This is enabled by its insulated gate that is isolated from the conduction channel by an oxide layer. This insulation layer has a very low voltage drop, making it very efficient in terms of energy consumption and operation.

The device is triggered by a gate voltage which creates a depletion region between the source and the drain, allowing current to flow across. As the voltage applied to the gate increases, the depletion regions gets wider and the amount of current that flows through the channel rises. Conversely, when the gate voltage is decreased, the depletion region narrows and the current flow is reduced.

The device also comes with a sensitive and linear frequency response, which means that it can switch very quickly and accurately. This makes the device very reliable and safe for power applications. Moreover, its low on-state resistance makes it more efficient than other transistors, providing more power at less voltage.

Conclusion

In conclusion, IRFR3707ZPBF is a versatile power MOSFET made by Infineon Technologies. It offers low on-state resistance, a wide range of performance options and excellent switching performance. The device’s main applications are motor control, automotive, renewable energy systems, and consumer electronics. The device is triggered by a gate voltage, which creates a depletion region that allows current to flow across the channel. It also has a sensitive and linear frequency response, making it very reliable and safe for power applications.

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