IPB035N08N3GATMA1

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The IPB035N08N3GATMA1 is a NanoMOS low on-resistance power MOSFET from Infineon Technologies, offering a low RDSON (drain-source on-resistance) and superior gate charge performance for high-current applications—ideal for switching, regulating, and amplification applications.

This MOSFET is a three-terminal, N-type device, rated at a drain-source voltage of 50 V, with a maximum RDSON of 3.5 mΩ. The excellent on-resistance of this device is made possible using Infineon\'s revolutionary NanoMOS technology, which uses a combination of low resistance silicon and advanced processing techniques to reduce the total gate resistance.

In terms of typical application fields, the IPB035N08N3GATMA1 is designed to deliver superior performance in high-current, high-frequency applications, due to its low on-resistance, fast switching, and high-temperature operating capability. Common applications for this type of MOSFET include power-management, motor-control, audio amplifier, and power supply circuitry.

In terms of its operational principle, the IPB035N08N3GATMA1 is a normally-off power MOSFET, meaning that the device is in its OFF state when no current is applied to the gate terminal. To turn on the device, a short voltage pulse (typically from 0V to 10V) is applied to the gate terminal, which causes a current to flow from the source to the drain. This voltage increases the electric field between the gate and the source, which then causes the source-to-drain optical channel to become conductive, thus allowing a current to flow through the device.

As the device is switched ON, the drain current is limited by the on-resistance of the device, RDSon. By controlling the gate voltage, thee Drain current can be precisely adjusted by modulating the size of the channel, thus providing a simple and efficient way to control the power delivered by the device. Additionally, the on-resistance of the IPB035N08N3GATMA1 is exceptionally low compared to other devices of this type, allowing higher current with lower losses.

In conclusion, the IPB035N08N3GATMA1 is an excellent solution for a wide range of high-power, high-frequency applications, in areas such as power management, motor control, audio amplification, and power supply circuitry. Its low on-resistance, fast switching, and temperature-optimized design make it an ideal choice for these applications.

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