IRFR2407PBF Allicdata Electronics
Allicdata Part #:

IRFR2407PBF-ND

Manufacturer Part#:

IRFR2407PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 42A DPAK
More Detail: N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P...
DataSheet: IRFR2407PBF datasheetIRFR2407PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFR2407PBF is a single-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with high power efficiency, excellent gate trigger characteristics and very low on-resistance. Primarily designed to be used as a power switch for loads up to 8A, this component is a popular choice for power designs with large power demands.

The IRFR2407PBF is a component of the “IRFP” family of MOSFETs, and is commonly used in automotive, battery powered, and medium-to-high load power supply applications. Its robust design, low on-resistance, and low gate threshold voltage give it the desired properties of controlling high current while consuming very little power. It is a reliable choice for low-to-medium efficiency power designs, especially when used in applications where significant levels of power are required.

The IRFR2407PBF features both internal and external components. On the internal side, it consists of a sensing MOSFET, a diode for charging and discharging the gate-source capacitance, and a second diode for ESD protection. On the external components side, it consists of the gate-source capacitance, plus optional elements such as resistor-capacitor networks, zener diodes, or snubbers.

The working principle behind the functioning of the IRFR2407PBF is based on the amount of voltage that is applied across the gate and source pins. When a voltage of 5V is applied across the gate and source pins, the gate voltage is “pulled” up to approximately 5V, creating a “gate turn-on” condition. This triggers the IRFR2407PBF to begin conducting current. The amount of current flowing through the drain-source use is proportional to the amount of voltage applied across the gate and source (Vgs), referred to as the “drain current slope”. When the voltage across the gate and source falls below 5V, the gate voltage no longer “pulls” up, and the MOSFET turns off, thus cutting the current to the drain-source.

In addition to its basic operational control, the IRFR2407PBF is equipped with thermal overload protection, back-gate biasing, and field-effect tabulation for simplified design and optimization. This ensures reliability and helps prevent unexpected shorts or failure modes, as well as making it easy for users to optimize their designs for power efficiency and heat dissipation.

Overall, the IRFR2407PBF is an ideal choice for designers looking for an efficient and reliable power supply solution that can handle large currents. Its robust design, low on-resistance, and low gate threshold voltage make it perfect for automotive, battery power, and medium-to-high load power supply applications. With the right setup, users can adjust the drain current slope and enhance the device’s power efficiency, and enjoy a low risk of failure.

The specific data is subject to PDF, and the above content is for reference

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