BSC016N03LSGATMA1 Discrete Semiconductor Products

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	131nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10000pF @ 15V
FET Feature:	--
Power Dissipation (Max):	2.5W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8
Package / Case:	8-PowerTDFN

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Introduction

The BSC016N03LSGATMA1 is a single-stage Field Effect Transistor (FET) designed to enable high conducting performance and provides an ideal solution for noise suppression and levelling in various commercial and industrial automation applications. The device is fabricated using advanced processes and operated as a depletion-mode transistor, with current cascading out of the source terminal and a drain-source blocking voltage of 300 volts. This FET is capable of operating at an extremely high dissipation rates and is ideal for use in mixed-analog and digital circuits.

Application field

BSC016N03LSGATMA1 FETs are ideal for use in multiple applications where superior switch performance, current capability and noise suppression are essential for circuit protection. Automotive and industrial applications benefit from the device\'s low input capacitance and quiescent drain current, which helps ensure reliable performance over a wide temperature range. The device also provides accuracy and stability in various electronic circuits and automated devices such as programmable logic, servomotors and digital controllers. For example, the devices are commonly employed in robotic arms as switches to enable accurate control, while their low threshold voltage also makes them ideal for powering LEDs in application displays.

Working principle

The BSC016N03LSGATMA1 FET utilizes a three-layer semiconductor structure for fast switching speed, low input capacitance, and high performance in application circuits where the levels of noise, leakage, or dissipated power must be strictly controlled. The FET has a channel consisting of n-type and p-type substrates and resides between the source and drain terminals. When a positive voltage is applied to the gate, electrons from the substrate flow into the channel, creating an additional layer of n-type electrons between the source and drain. As a result, a conducting channel is created between the two terminals and current is allowed to pass through the FET. When the voltage applied to the gate is removed, the electrons leave the channel and the device effectively blocks the flow of current between the source and drain.

Advantages

The advantage of using a BSC016N03LSGATMA1 FET over other types of FETs (such as a MOSFET) is that the depletion-mode transistor requires only a small gate-channel voltage to create a conductive channel. This enables fast switching times with minimal degree of power dissipation, making it ideal for circuits with strict power requirements. Furthermore, these devices have low forward voltage drop, which helps improve power efficiency.Additionally, BSC016N03LSGATMA1 FETs are protected from electrostatic discharge (ESD) since their surface-mount package uses an ESD-safe protection structure. This essentially ensures that in an ESD event, the device will not suffer irreparable damage. This is very important for circuits operating in harsh environments, such as those in industrial automation or outdoor applications.

Conclusion

The BSC016N03LSGATMA1 FET is a reliable single-stage Field Effect Transistor designed to enable fast switching, low power dissipation and efficient noise suppression. The device is suitable for a wide range of applications, such as automotive and industrial automation, digital controllers, and LED displays. It is highly protected against ESD and the low threshold voltage allows the device to be used in high-voltage applications with excellent accuracy and stability.

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