Through hole afe processor - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SA1020-Y(T6ND1 AF-ND	2SA1020-Y(T6ND1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-Y(T6ND2 AF-ND	2SC2655-Y(T6ND2 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-Y(T6TR1 AF-ND	2SA1020-Y(T6TR1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-Y(T6ND3 AF-ND	2SC2655-Y(T6ND3 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-Y(T6FJT AF-ND	2SA1020-Y(T6FJT ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-Y(ND1AF )-ND	2SA1020-Y(ND1,A F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-Y(6MBH1 AF-ND	2SC2235-Y(6MBH1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-O(T6FJT AF-ND	2SC2235-O(T6FJT ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-O(ND1AF )-ND	2SC2655-O(ND1,A F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-Y(6MBH1 AF-ND	2SA1020-Y(6MBH1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-Y(DNSOA F)-ND	2SC2235-Y(DNSO, AF)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-Y(6MBH1 AF-ND	2SC2655-Y(6MBH1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-Y(T6FJT AF-ND	2SC2235-Y(T6FJT ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-O(ND2AF )-ND	2SC2655-O(ND2,A F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-Y(T6ND3 AF-ND	2SA1020-Y(T6ND3 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-Y(T6ND1 AF-ND	2SC2655-Y(T6ND1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-Y(T6NDA F-ND	2SC2235-Y(T6ND, AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
BCW60E6422HTMA1 -ND	BCW60E6422HTMA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
BCW61E6384HTMA1 -ND	BCW61E6384HTMA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
BCW68E6359HTMA1 -ND	BCW68E6359HTMA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
2N1131B-ND	2N1131B	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	1000 Order	500+: $2.8709
BC182CS-ND	BC182	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	1000 Order	--
1657-1223-ND	JANTXV2N3868	M/A-Com Technology Solutions	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	143 Order	1+: $15.9831 10+: $14.7829 100+: $12.6256
1086-20787-ND	2N335	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-5 Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20786-ND	2N333A	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-5 Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20788-ND	2N335A	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-5 Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20789-ND	2N336	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20790-ND	2N336A	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20901-ND	2N3724L	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $11.516
1086-20816-ND	2N3486	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46	1000 Order	100+: $6.6509
1086-20785-ND	2N333	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $40.3018
1086-20902-ND	2N3724UB	Microsemi Corporation	View more Series: * Packaging: Bulk Part Status: Active Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $14.7668
BCX5116H6433XTM A1-ND	BCX5116H6433XTM A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	1000 Order	8000+: $0.0689
BCX5316H6327XTS A1-ND	BCX5316H6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	7000+: $0.0689
BCX6916H6327XTS A1-ND	BCX6916H6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	8000+: $0.097
BCX5116H6327XTS A1-ND	BCX5116H6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	1000 Order	7000+: $0.0689
BCX5216H6327XTS A1-ND	BCX5216H6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	7000+: $0.0689
BCV47E6393HTSA1 -ND	BCV47E6393HTSA1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100A, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 360mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	1+: $0
BCX5316H6433XTM A1-ND	BCX5316H6433XTM A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	8000+: $0.0689
BCX5310H6327XTS A1-ND	BCX5310H6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	7000+: $0.0689

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