S29GL064N90DAI033 Allicdata Electronics
Allicdata Part #:

S29GL064N90DAI033-ND

Manufacturer Part#:

S29GL064N90DAI033

Price: $ 1.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral...
DataSheet: S29GL064N90DAI033 datasheetS29GL064N90DAI033 Datasheet/PDF
Quantity: 1000
2200 +: $ 0.92870
Stock 1000Can Ship Immediately
$ 1.02
Specifications
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)
Series: GL-N
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S29GL064N90DAI033 is a Flash memory component that is widely used for designing and developing reliable storage products. It is a quad-die architecture with a total density of 256 megabits across four independent die. This component is suitable for a wide range of system requirements. The component features high performance, low-power consumption, excellent endurance and data retention, and small size. It is also designed to resist radiation, making it ideal for space applications. The component is also ECC (Error Correcting Code) ready, allowing for additional data protection.

S29GL064N90DAI033 applications include consumer electronics, medical, automotive, industrial, military and aerospace applications. Its wide range of use is a testament to its excellent endurance, low-power consumption, and its resistance to radiation. This component is also commonly used in embedded systems, as it can offer high performance while also consuming very little power.

The working principle of S29GL064N90DAI033 starts with the use of transistors which act as an array of gates between the power source and the memory cells on the chip. When a voltage is applied to these gates, the memory cells can be read, written, or erased. In the Flash memory process, the voltage applied to the transistors is used to change the charge state of the memory cells. This enables you to store and recall data.

The Flash memory principle allows you to recall data without the need for constant refreshing, unlike SRAM memory. This makes the Flash memory ideal for use in applications where power consumption is critical, as the device does not require a constant supply of power. The S29GL064N90DAI033 is therefore suitable for low-power applications, such as those found in mobile devices or other battery-powered products.

The S29GL064N90DAI033 chip is an excellent choice for those looking for reliable and durable Flash memory solutions. With its low-power consumption and its radiation resistance, the component is perfect for space, military, and aerospace applications. This component offers reliable and powerful performance with a wide range of use.

The specific data is subject to PDF, and the above content is for reference

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