Allicdata Part #: | S29GL064S90TFVV10-ND |
Manufacturer Part#: |
S29GL064S90TFVV10 |
Price: | $ 2.76 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | S29GL064S90TFVV10 Datasheet/PDF |
Quantity: | 2673 |
1 +: | $ 2.50740 |
10 +: | $ 2.27556 |
25 +: | $ 2.22642 |
91 +: | $ 2.21400 |
182 +: | $ 1.98557 |
273 +: | $ 1.97816 |
546 +: | $ 1.90530 |
819 +: | $ 1.84232 |
1001 +: | $ 1.81145 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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The S29GL064S90TFVV10 is a type of nonvolatile semiconductor memory, commonly referred to as a flash memory device. It is used in a variety of applications, including digital storage in computers, cameras and other digital devices, embedded systems and cellular phones. This type of flash memory is typically used for code storage in embedded systems, but it can also be used for data storage in devices like cameras and digital music players.
The S29GL064S90TFVV10 flash memory has the distinction of being a reprogrammable, nonvolatile, electrically erasable (read-only) device. This means that the contents of the memory can be written and rewritten to, subject to certain restrictions. The device is capable of being written to and erased at least 10,000 times, making it a reliable source of nonvolatile memory.
In terms of its working principles, the S29GL064S90TFVV10 flash memory operates in a similar fashion to other nonvolatile memory technologies. Data is stored in floating-gate transistors, which are essentially small transistors with a small floating gate between their source and drain. The gate is insulated from the transistor using an oxide layer, and data is written to the device by applying an electrical charge to the gate, creating a permanent change in the transistors\' threshold voltage level.
The S29GL064S90TFVV10 can be programmed directly in-system without needing an external programmer, as it is programmed using a simple high-voltage procedure. This enables the device to be integrated more easily into the application design. The device is also able to support multiple read and write operations, allowing for higher speed data transfers.
Due to the versatility, reliability and flexibility of the S29GL064S90TFVV10 flash memory, it is suitable for a range of applications. It is used in a variety of embedded systems, including automotive, aerospace and industrial applications. It is also used in other nonvolatile memory applications, such as data cards, digital video camcorders and digital cameras.
The S29GL064S90TFVV10 flash memory is an excellent choice for a variety of applications, offering reliable, fast and flexible data storage. Its in-system programming capabilities, plus its versatile usage for various applications, make it an ideal choice for a variety of memory solutions.
The specific data is subject to PDF, and the above content is for reference
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