S29GL256P90TFCR23 Allicdata Electronics
Allicdata Part #:

S29GL256P90TFCR23-ND

Manufacturer Part#:

S29GL256P90TFCR23

Price: $ 3.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 90...
DataSheet: S29GL256P90TFCR23 datasheetS29GL256P90TFCR23 Datasheet/PDF
Quantity: 1000
1000 +: $ 3.51257
Stock 1000Can Ship Immediately
$ 3.87
Specifications
Series: GL-P
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a component that stores, retrieves and reports data within a computing system. S29GL256P90TFCR23 is the most important component of memory device. This component is widely used in the automotive, computing, industrial and communications markets.

As an advanced memory component in the market, the S29GL256P90TFCR23 offers robust operations and performances. This component is designed to handle information efficiently and quickly. It is an ideal memory device for applications involving heavy data traffic and online data processing.

S29GL256P90TFCR23 is a 16mbit CMOS sot23-compliant device. It has a 4K-word boot area with 16K-word lock bit storage area. This component is built with single power supply ranging from 2.7V to 3.6V. It also has an internal high speed counter which keeps track of the address of the last executed command. This device also has a low voltage detect flag which is used to detect low voltage condition.

The S29GL256P90TFCR23 offers enhanced operations. This component has an erase/program cycle time of 0.045 second which enables fast data operation. This device also offers the possibility of high speed data programming with a peak data rate of 66MHz. Furthermore, this component features extended erase and program times like block unit erase, block unit programming, sector unit erase and sector unit programming. It also offers on-chip calculate erase/program pulse.

In terms of working principle, this component utilises a special architecture to facilitate operation. This architecture is based on the pseudostatic operation. This means that the device operates in a similar way as a Static Random Access Memory device, but instead it uses an underlying dynamic memory architecture. The S29GL256P90TFCR23 also uses a latch which provides data protection between the memory core and I/O lines.

In order to manage its operation, this device crucially relies on the embedded software stored in a non-volatile memory. The software manages the timing, voltage and temperature parameters needed to ensure fast operations and optimal performance. This software can also be used to monitor the health and status of the memory device and check the integrity of its operation.

S29GL256P90TFCR23 is a reliable and powerful memory device for applications in different markets. This component is suitable for automotive, computing, industrial and communications markets. With its robust operations and performance, it can ensure fast and reliable data processing.

The specific data is subject to PDF, and the above content is for reference

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