Allicdata Part #: | S29GL064S70DHI010-ND |
Manufacturer Part#: |
S29GL064S70DHI010 |
Price: | $ 2.25 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M PARALLEL 64FBGA |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 70n... |
DataSheet: | S29GL064S70DHI010 Datasheet/PDF |
Quantity: | 1730 |
1 +: | $ 2.04750 |
10 +: | $ 1.85787 |
25 +: | $ 1.81742 |
50 +: | $ 1.80734 |
100 +: | $ 1.62086 |
260 +: | $ 1.61481 |
520 +: | $ 1.55535 |
780 +: | $ 1.50394 |
1040 +: | $ 1.47874 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (4M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (9x9) |
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The S29GL064S70DHI010 is a memory product developed by Microchip Technology. This device is a 64Mb, 70ns, 3.0V/1.8V, Bottom Boot BlockTM, Flash Memory. It is an improved version of the original S29GL064N which offers a larger memory capacity and an improved memory performance. It also features a high-speed bootloader, error detection and correction, enhanced boot code protection, and a number of advanced features.
This memory product is mainly used in embedded devices in which large amount of memory storage is required. It is frequently used for storing large amounts of data, such as images, audio, video, audio-visual data, software instructions and other multimedia content. In addition to this, it also can be employed in control applications where fast and accurate data retrieval is absolutely necessary. The S29GL064S70DHI010 also features an Error-Detect Correction (EDC) architecture which ensures data integrity.
The S29GL064S70DHI010 also incorporates a high-speed bootloader which allows an embedded device to be booted up quickly and accurately. This makes the device suitable for use in fast-paced application domains. It also utilizes a secure erasure function which adds an extra layer of security by ensuring that all data stored in the device is securely erased before being released to the user.
The working principle of high density S29GL064S70DHI010 flash memory is based on the charge trapping technology. This technology involves trapping charges onto the two dielectric mediums such as the floating gate and the control gate of the memory cell. The charge that is trapped on the control gate allows the transistor to be switched on or off depending on the presence or absence of the bit. This technology allows the device to provide faster access rates, reduced power consumption and improved reliability.
To ensure data integrity, the S29GL064S70DHI010 also features a built-in error detection and correction mechanism. This mechanism works by computing the parity bit which is associated with the data stored in the memory cell. The parity bit will detect any errors which occur during the writing or reading of data to or from the memory. In case errors have been detected, the parity bit will then automatically correct the errors and ensure data integrity.
In conclusion, the S29GL064S70DHI010 is an advanced flash memory product, offering a high memory capacity and improved performance. It is primarily used in embedded systems for storing large amounts of data, and is also suitable for use in control applications where data retrieval must be fast and accurate. This memory also features a built-in error detection and correction mechanism, and a high-speed bootloader which ensures that the device can be booted up quickly and accurately.
The specific data is subject to PDF, and the above content is for reference
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