S29GL064S80DHB020

Series:	Automotive, AEC-Q100, GL-S
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	80ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)

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S29GL064S80DHB020 is a type of memory device which is manufactured by Spansion, providing 64Mbits of data storage. It is a type of non-volatile memory which is based on a Flash memory chip, therefore meaning that data can be stored reliably and securely for long periods of time without power.S29GL064S80DHB020 is designed for use in demanding applications such as automotive, automotive network designs, and industrial control systems. It is a multi-chip package (MCP) device consisting of four individual 16Mbit Flash memory components housed in a space-saving 8-ball TFDFN package. The device is composed of two independent logical memory arrays, which can be used independently and configured to provide simultaneous code execution, redundant storage of critical code, as well as storage of critical data.S29GL064S80DHB020 features an integrated command sequencer and Read Control Logic, eliminating the need for an external address counter and thereby minimizing application board space. It uses a simple two-wire serial interface that is compatible with a variety of low-cost microcontrollers, allowing the individual memory components to be easily configured for different applications.S29GL064S80DHB020 offers a large 64Mbit storage capacity, low power consumption, and fast program and erase times. It also features enhanced security features such as write protect, password protected sector, and Boot Block protection, which enables secure code storage and execution. In addition, the device is designed to be compliant with JEDEC standards and AEC-Q100 standards, ensuring compatibility with a wide range of applications.S29GL064S80DHB020 can be used for a wide range of applications including industrial control systems, automotive networks, embedded microcontroller storage, and data storage. As a non-volatile memory device, it is able to provide reliable, secure data storage and fast program/erase times, making it ideal for use in demanding applications.The working principle behind S29GL064S80DHB020 is based on the concept of flushing electron tunneling (FET). FET is a type of non-volatile memory that stores data in cells that are electrically isolated from one another. The cells are electrically addressable, meaning that a block of data can be written to and read from the cells simultaneously.When a voltage is applied to the cell, electrons begin tunneling through the cell\'s isolation barrier, creating an electrical charge within the cell. This charge is retained until the cell is triggered again by an electrical signal, at which point the electrons are flushed and the cell is reset back to its starting state. The amount of charge that is held in the cell determines whether it is considered a 0 or a 1 (binary data) and is how data is stored within the S29GL064S80DHB020 device.The data is then written and read from the device with a two-wire serial interface. The interface works by providing an address and control signals to the device so that one or multiple data cells can be read or written simultaneously, depending on the controller\'s configuration.S29GL064S80DHB020 is an efficient, cost-effective, and secure way to store data in today’s increasingly demanding applications. Its large storage capacity, low power consumption, fast program/erase times, and enhanced security features make it a great choice for automotive and industrial control systems, embedded microcontroller storage, and data storage.

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