Allicdata Part #: | S29GL512T12TFVV20-ND |
Manufacturer Part#: |
S29GL512T12TFVV20 |
Price: | $ 6.52 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 12... |
DataSheet: | S29GL512T12TFVV20 Datasheet/PDF |
Quantity: | 91 |
1 +: | $ 5.93460 |
Series: | GL-T |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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Memory is one of the most common and important components used in our daily lives. It is used to store and retrieve data, and has become indispensable to many applications. The S29GL512T12TFVV20 is a type of static random access memory (SRAM) used in computers and embedded systems. This memory is known for its fast performance, low power consumption and high number of address bits.
S29GL512T12TFVV20 is an SRAM chip with 512K x 16 bit organization. It requires a single +5V power supply and utilizes an industry-standard pinout, making it easy to integrate with a wide range of system designs. The memory is capable of sustaining a cycle time of 150 ns and outputs data at a rate of 400 Mbps. It features wide address bits, allowing it to store up to 2,097,152 bytes. It also achieves a clock frequency of 20MHz.
This type of memory is used in a wide range of applications, including medical, industrial, automotive and aerospace equipment. In medical devices, it is used to store vital patient information. In industrial equipment, it is used to enhance machine performance and automated processes. In automotive and aerospace, it helps to store and process navigation and flight control data.
The S29GL512T12TFVV20 works on a different principle than ROM or RAM. Its working principle is based on an array of MOSFETs, which are arranged in a matrix structure. This matrix consists of rows and columns and the MOSFETs consist of three terminals, source, drain and gate. The information stored in the memory is determined by the charge contained in the gate of each MOSFET. The MOSFETs act as a switch allowing current to flow between the source and drain terminals when a voltage is applied to the gate. When the voltage is removed, the MOSFET returns to its original state and the stored data is preserved.
The memory is accessed by a number of external IO pins, which are configured via instructions sent by the processor. Each column or row is connected to two external IO pins, one for reading, one for writing. When a read instruction is received, the memory controller sends a voltage to activate the MOSFETs that correspond to the desired data. The MOSFETs then send a signal to the output pins, allowing the data to be sent to the processor. When a write instruction is received, the memory controller sends a voltage to the columns and rows to set the value of the desired MOSFETs and thereby changes the data stored in the memory.
The S29GL512T12TFVV20 is an excellent example of SRAM memory, offering superior performance and low power consumption. Its wide array of address bits make it well suited for a variety of applications, making it a popular choice for many system designs. Its working principle is straightforward and makes it easy to access and control. It is a highly reliable memory solution and can be used in a wide range of markets and applications.
The specific data is subject to PDF, and the above content is for reference
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