S29GL256S10DHI023 Allicdata Electronics
Allicdata Part #:

S29GL256S10DHI023-ND

Manufacturer Part#:

S29GL256S10DHI023

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1...
DataSheet: S29GL256S10DHI023 datasheetS29GL256S10DHI023 Datasheet/PDF
Quantity: 4400
Stock 4400Can Ship Immediately
Specifications
Series: GL-S
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)
Description

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The S29GL256S10DHI023 is a type of memory device that has a range of applications in commercial and industrial product designs. It is a 2Gb SDRAM running on a 2GHz clock rate and holds up to 2Gb of data. In order to maximize performance, the device features an advanced on-die-termination technology that helps to reduce external noise and reduce power consumption. Additionally, the device also offers multiple power-saving modes and has a fast start-up time.

The S29GL256S10DHI023 can be used in a variety of applications, including consumer electronics, networking, automotive, consumer medical, medical imaging, gaming, industrial controls, and more. It offers fast data access and reliable operation, making it an ideal choice for use in high-performance and high-memory applications. It also has a broad range of operating voltages, making it suitable for use in a wide range of operating environments.

The working principle of the S29GL256S10DHI023 is based on a basic synchronous DRAM technology. This type of memory accesses and stores data in synchronous bursts, allowing for much faster data access speeds than traditional asynchronous DRAM. Additionally, the device features a burst-readable mode and a burst-write mode, allowing the user to choose the best mode for their application based on their data requirements. The device also has a burst-write protection mode, which prevents data corruption when crash-writes occur. Finally, the device also features on-die refresh and refresh priority-based refresh capabilities.

The S29GL256S10DHI023 is a versatile memory device that can be used for a variety of applications. Its advanced features make it a great choice for designs that require high data access speeds and reliable operation. Its power saving and fast start-up features make it ideal for use in a wide range of operating environments. The device is also available in a range of operating voltages and packages, making it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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