S29GL032N90FFIS32

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The S29GL032N90FFIS32 is a high-density, high-performance 32M-bit ( 4M-byte) CMOS Flash memory device produced by Spansion. It has been designed using a split-gate cell and based on the single-transistor 3rd-generation floating gate technology. It has an organisation of 8M-bit x 4 banks, with 512K-byte array size per bank. It is fabricated with a 0.18-micron process technology for high-density integration, and is available in 56-pin TSOP type II, 8x20 mm package. Its features include fast READ access time of 90ns, fast Erase and Programming time of under 25ms and 256-byte page mode operation. The device offers high reliability over 4,000 Program/Erase cycles and data retention of up to 20 years.

The S29GL032N90FFIS32 is an ideal solution for a wide range of embedded applications. It can be used in communications products such as routers, telecom equipment, DSL modems, VoIP products and consoles, as well as in automotive and industrial automotive controllers parts. It is also suitable for consumer applications such as digital TV/STB control, set top boxes, digital cameras, wireless PC peripherals, portable audio and gaming devices.

In terms of its working principle, the S29GL032N90FFIS32 consists of 8M-bit x 4 banks with a 32-bit multiplexed address and data bus. It is equipped with the following general signals: chip-enable (CE#), write-enable (WE#), output-enable (OE#), program/erase control (PGM/ES#), supply voltage (VCC) and ground (GND). The device is based on the single-transistor split-gate technology, featuring NOR and NAND Flash memory. It has a single-sector erase mode, while the data can be programmed and erased in blocks containing multiple sectors.

The programming process of the S29GL032N90FFIS32 is accomplished by applying the proper voltage to the gate and drain of the memory cell\'s transistor. The voltage applied causes the transistor to leak, thereby changing the cell\'s charge state. When the cell is sufficiently charged, a signal is sent to the Erase/Program controller to complete the programming process.

The S29GL032N90FFIS32 also features an erase mechanism, which enables the user to reset the memory cell to its initial charge state. This can be accomplished by applying a negative voltage to the gate as well as a positive voltage to the drain of the memory cell. When this voltage is applied, the charge will leak out of the memory cell and the cell is reset to its initial state.

In addition, the S29GL032N90FFIS32 has several built-in features that enable efficient management of the Flash memory. These include data-protection functions, such as write-protect, block-erase-protect and sector-protect, as well as reading out of data in the protected area. The device also includes an integrated error-correction code (ECC) system, which increases data reliability. The ECC increases the accuracy of the data stored in the memory, thus improving the device\'s flexibility and reliability.

The S29GL032N90FFIS32 is a powerful and robust memory device, designed for embedded applications. It offers high performance, high-density integration and enhanced reliability. Its fast read access time, fast programming and erase time, as well as the integrated ECC system, make it suitable for a wide range of applications.

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