Allicdata Part #: | S29GL01GS11TFI013-ND |
Manufacturer Part#: |
S29GL01GS11TFI013 |
Price: | $ 6.14 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110... |
DataSheet: | S29GL01GS11TFI013 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 5.57829 |
Series: | GL-S |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (64M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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S29GL01GS11TFI013 is a 1 Giga-bit flash memory device manufactured by Micron Technology Inc, a leading player in the semiconductor industry. This device is suitable for applications that require high storage capacity and which demand a low-cost solution. It is a great choice for embedded systems, consumer electronics, industrial and medical applications, consumer applications and automotive systems, among others.
This device comes with an 8-bit wide interface and is available in the small-outline package (diameter 0.8mm). It provides up to test support with a single erase and program cycle and features a high quality write execution time with a maximum write speed of 10 Mbps. The device offers a wide range of speeds, from 66 MHz to 133MHz, allowing for maximum throughput flexibility.
The S29GL01GS11TFI013 is a non-volatile flash memory device, providing users with fast data retrieval and write access. Its architecture consists of a single memory array connected to multiple data channels. This memory device features a high-speed embedded controller that supports enhanced features such as ECC, power-fail safety and enhanced erase/program operations. The device offers industry-leading protection mechanisms, including Data Protection (AES128/256) ECC and write protection. The Erase/Program Operation mode also supports a sector, block or chip erase.
The S29GL01GS11TFI013 works on the basis of the NAND gate logic. This gate logic consists of a set of semiconductor transistors and diodes that are connected together in a electrical circuit. When a voltage is applied to the device, it flips between two different states, either turning the output on or off. This flipping is done quickly, allowing for high speed data exchange and storage. The NAND gate logic also provides enhanced data protection, error correction code and write protection features.
The S29GL01GS11TFI013 can be used in a variety of embedded systems, consumer electronics, industrial and medical applications, consumer applications and automotive systems. It features low latency, high write performance and fast read/write speeds, making it suitable for a wide range of applications. Furthermore, its high data protection and error correction code features make it highly reliable and provide improved system longevity.
To conclude, the S29GL01GS11TFI013 is a top of the line memory device well-suited for a wide range of applications. Its high write performance and fast read/write speeds, along with its data protection and error correction code features make it a great choice for embedded systems, consumer electronics, industrial and medical applications, consumer applications and automotive systems, among others.
The specific data is subject to PDF, and the above content is for reference
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