Allicdata Part #: | S29GL512N11TFVR20-ND |
Manufacturer Part#: |
S29GL512N11TFVR20 |
Price: | $ 12.95 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa... |
DataSheet: | S29GL512N11TFVR20 Datasheet/PDF |
Quantity: | 1000 |
91 +: | $ 11.77500 |
Series: | GL-N |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8, 32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
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S29GL512N11TFVR20, or sometimes referred to as S29GL51211TFVR, is a high-density non-volatile flash memory device manufactured by Spansion. It is an ideal memory solution for applications that require a high amount of data storage in a small package. It is designed for high reliability, low power consumption, fast access times and superior performance.
The S29GL512N11TFVR20 has two main application fields. The first is embedded systems, such as controllers, set-top boxes, gaming consoles and embedded audio systems. The second is OEM application areas, such as mobile phones, laptops, tablets and navigation systems.
Features and Benefits of S29GL512N11TFVR20
- High-density non-volatile devices in small packages
- High reliability
- Low power consumption
- Fast access times
- Wide range of densities
- Flexible design options
- Low cost
The working principle of the S29GL512N11TFVR20 is based on the conventional flash memory technology. It uses a 4 bit wide data bus and a 64-word internal buffer to read and write data. It is powered by single or dual voltage supply, and features an enhanced erase algorithm to increase endurance. It also supports an array of program/erase cycles, allowing it to withstand harsh conditions such as high temperatures, vibration, and shock.
The device is divided into two independent memory banks, each of which can store up to 512 Mbits of data. Each memory bank is further divided into four sections, and each section can be erased and programmed independently. In addition, the device comes with a wide range of read/write speeds, from 50 nanoseconds to 6 microseconds, and support for Error Correction Code and EDC.
In summary, the S29GL512N11TFVR20 is a high-density, non-volatile flash memory device that is ideal for embedded and OEM applications. It offers a wide range of features, such as low power consumption, fast access times and superior performance, to meet the needs of modern applications.
The specific data is subject to PDF, and the above content is for reference
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