S29GL512N11TFVR20 Allicdata Electronics
Allicdata Part #:

S29GL512N11TFVR20-ND

Manufacturer Part#:

S29GL512N11TFVR20

Price: $ 12.95
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa...
DataSheet: S29GL512N11TFVR20 datasheetS29GL512N11TFVR20 Datasheet/PDF
Quantity: 1000
91 +: $ 11.77500
Stock 1000Can Ship Immediately
$ 12.95
Specifications
Series: GL-N
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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S29GL512N11TFVR20, or sometimes referred to as S29GL51211TFVR, is a high-density non-volatile flash memory device manufactured by Spansion. It is an ideal memory solution for applications that require a high amount of data storage in a small package. It is designed for high reliability, low power consumption, fast access times and superior performance.

The S29GL512N11TFVR20 has two main application fields. The first is embedded systems, such as controllers, set-top boxes, gaming consoles and embedded audio systems. The second is OEM application areas, such as mobile phones, laptops, tablets and navigation systems.

Features and Benefits of S29GL512N11TFVR20

  • High-density non-volatile devices in small packages
  • High reliability
  • Low power consumption
  • Fast access times
  • Wide range of densities
  • Flexible design options
  • Low cost

The working principle of the S29GL512N11TFVR20 is based on the conventional flash memory technology. It uses a 4 bit wide data bus and a 64-word internal buffer to read and write data. It is powered by single or dual voltage supply, and features an enhanced erase algorithm to increase endurance. It also supports an array of program/erase cycles, allowing it to withstand harsh conditions such as high temperatures, vibration, and shock.

The device is divided into two independent memory banks, each of which can store up to 512 Mbits of data. Each memory bank is further divided into four sections, and each section can be erased and programmed independently. In addition, the device comes with a wide range of read/write speeds, from 50 nanoseconds to 6 microseconds, and support for Error Correction Code and EDC.

In summary, the S29GL512N11TFVR20 is a high-density, non-volatile flash memory device that is ideal for embedded and OEM applications. It offers a wide range of features, such as low power consumption, fast access times and superior performance, to meet the needs of modern applications.

The specific data is subject to PDF, and the above content is for reference

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