DMP2160UFDB-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMP2160UFDB-7DITR-ND |
Manufacturer Part#: |
DMP2160UFDB-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 20V 3.8A 6UDFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.8A 1.4W Surf... |
DataSheet: | DMP2160UFDB-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 536pF @ 10V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type B) |
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The DMP2160UFDB-7 is a dual-in-line package (DIP) MOSFET array designed to provide high performance, power control, and protection in integrated circuits (ICs) and other electronic components. It is a MOSFET array that contains two transistors, each with a source, gate and drain, located in one package for cost and space efficiency. The dual transistors are connected together in a common configuration, allowing them to be used as a driver for a single or multiple gates for a MOSFET device.
The DMP2160UFDB-7 is capable of providing gate control currents from 5mA up to 18mA, and gate-source thresholds from 26V up to 50V. It also includes internal gate-to-source and gate-to-drain capacitance to reduce noise and increase performance during operation. The device also offers ESD protection up to 8kV and thermal protection up to 175°C. It is designed to offer superior power performance, superior noise and EMI immunity, and superior power saving compared to other MOSFET packages.
The DMP2160UFDB-7 is suitable for use in a variety of applications, including motor control, power supplies, voltage regulators, gate drivers, and protection circuits. Its ability to drive multiple gate designs in a single package makes it an ideal choice for applications where size and power efficiency are important considerations. Additionally, its high threshold voltage makes it a better choice for high-side applications where large gate-source voltages are expected.
The working principle of the DMP2160UFDB-7 is based on the principle of the MOSFET array, which is the simultaneous operation of multiple transistors. When a voltage is applied between the control gate and source of the MOSFET array, the current carried by this transistor is determined by the relative voltage of the gate to the source. When the voltage is increased above the threshold voltage, the current increases and is conducted by the MOSFETs. This principle is utilized to provide a high level of control over a large load and can be used in a variety of applications.
In conclusion, the DMP2160UFDB-7 is a reliable and cost effective MOSFET array which offers high performance, power control, and protection in integrated circuits and other applications. Its ability to drive multiple gates in a single package allows it to provide superior power performance, noise immunity, and power saving compared to other MOSFETs. Its high threshold voltage makes it a better choice for high-side applications where large gate-source voltages are expected. The DMP2160UFDB-7 is a versatile and efficient device, suitable for use in a variety of applications including motor control, power supplies, voltage regulators, gate drivers, and protection circuits.
The specific data is subject to PDF, and the above content is for reference
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