| Allicdata Part #: | DMP2123LQ-13-ND |
| Manufacturer Part#: |
DMP2123LQ-13 |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 20V 3A SOT23 |
| More Detail: | P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-... |
| DataSheet: |  DMP2123LQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.09245 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 7.3nC @ 4.5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 443pF @ 16V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.4W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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DMP2123LQ-13 is a single, N-channel enhancement mode MOSFET. It can be used in a variety of applications, but its most common applications are in high-speed switching, voltage regulation, and DC/DC conversion. This article will discuss the application field and working principle of the DMP2123LQ-13.
When considering the applications of a MOSFET, it is important to consider the characteristics of the device. The DMP2123LQ-13 is a low-voltage device, with a maximum drain-source voltage of 20V. This maximum voltage is compatible with most low-voltage circuits. It also has a low on-resistance of 3.4 ohms, making it an ideal choice for high-speed switching applications. Additionally, the gate-source threshold voltage is low (1.5V), allowing it to be used in low-voltage applications.
The DMP2123LQ-13 is also an enhancement-mode MOSFET. This means that when the voltage between the gate and source is below the threshold voltage, the device will be off. When the voltage is above the threshold voltage, the device will be on. This makes it ideal for voltage regulation and DC/DC conversion applications, where a controlled on/off state is required.
The working principle of the DMP2123LQ-13 is based on the physical properties of the MOSFET structure. MOSFETs are composed of two elements, a gate and a source. The gate controls the flow of electrons between the source and the drain. When a voltage is applied to the gate, it creates an electric field which affects the flow of current between the source and the drain. This control of current is the basis of most MOSFET-based applications.
The DMP2123LQ-13 is an ideal choice for a wide range of applications. Its low-voltage and low on-resistance characteristics make it an ideal choice for high-speed switching, voltage regulation, and DC/DC conversion. Additionally, its enhancement-mode design makes it ideal for applications which require an on/off state. These characteristics, combined with its physical structure, make the DMP2123LQ-13 an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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