DMP2130LDM-7

The DMP2130LDM-7 is a single N-Channel enhancement mode depletion type MOSFET designed for general purpose switching and amplifier applications. It is made up of a silicon gate and a field-effect transistor which is capable of providing excellent low-current and low-voltage capabilities in order to deliver high levels of performance with low power consumption. This makes it suitable for a wide range of applications, from industrial motor control and robotics to audio, video and automotive applications.

The internal structure of the device is comprised of an N-type channel, a floating gate and a source region. An accessible gate, located between the source and channel, works as the control over the electric field created by the electric current, thus allowing for insulation of the source from the channel. This helps to prevent unwanted conduction of energy and thus allows for more efficient device operation.

The DMP2130LDM-7 device features a low gate charge, thereby enabling greater efficiency in terms of current transfer from the source to the channel. This effectively reduces the power consumption of the device and allows for greater power savings. The device also features a low drain-to-source on-state resistance (RDS(on)) of 10 Ω, making it suitable for a wide range of applications that require excellent efficiency and low resistance. The device is also able to conduct high peak currents of up to 30 A.

The DMP2130LDM-7 is highly capable of meeting the requirements for large power systems. Additionally, it features low power requirements and small silicon area offering manufacturer cost savings. Furthermore, the device is ideal for switching applications that require a low RDS(on), which makes it suitable for applications such as light dimming and power supplies.

This device also features high switching speeds as well as greater reliability. It also operates over a wide range of temperatures, making it suitable for use in applications subjected to extreme temperatures. Additionally, it is capable of withstanding gate-source voltages of up to 30 V, thereby making it capable of meeting the demanding requirements of high power systems, low-noise applications and data routing.

The working principle of the DMP2130LDM-7 relies on the flow of electric current through the channel in order to create an electric field that controls the flow of current from the source to the channel. This helps to isolate the source from the complexity of the channel, providing better device performance and lower power consumption.

Overall, the DMP2130LDM-7 is an ideal device for a wide range of applications, from industrial motor control and robotics to audio, video, and automobiles. Thanks to its low gate charge, low RDS(on), high peak currents, and wide temperature range, it is an excellent choice for low-power and high reliability applications that require excellent device performance.