DMP21D6UFD-7

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The DMP21D6UFD-7 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the Single Category. It is a power MOSFET manufactured in a TO-252 (DPAK) plastic package. It is manufactured by Diodes Incorporated and is designed for automotive, off-line and distributed power, telecom and industrial applications.

The goal of any MOSFET is to control the flow of current through the device. This is achieved by using two different voltage levels applied at two different points. In the case of the DMP21D6UFD-7, these two voltage levels are the gate-source and gate-drain voltages. The gate-source voltage is applied at the gate terminal and the gate-drain voltage is applied at the drain terminal. The voltage at the gate terminal is then used to control the flow of current in the drain-source direction.

When the gate voltage is higher than a certain threshold voltage, the transistor is said to be “on”. This means that the current is able to flow from the drain to the source. On the other hand, when the gate voltage is lower than the threshold voltage, the device is said to be “off” and the current is not able to flow from the drain to the source. The amount of current that can flow through the device depends on the voltage applied to the gate terminal.

The DMP21D6UFD-7 is designed for power applications since it is capable of handling high currents. It is also designed to operate in higher temperatures than standard MOSFETs, with the maximum junction temperature being 150°C. It has an RDS(on) value of 0.055Ω, low gate charge and low leakage current, which makes it a very efficient device.

The DMP21D6UFD-7 is primarily used in automotive, off-line and distributed power, telecom and industrial applications. In automotive applications, it is used in power switches, motor drives, fuel injection systems and HVAC systems. In telecom and industrial applications, it is used in switching converters, DC/DC Converters, AC/DC switches, lighting controls and relays.

The DMP21D6UFD-7 is a very versatile MOSFET and can be used in a wide variety of applications. It offers high currents, low RDS(on) values, low gate charge and low leakage current, making it an efficient device for power applications. It is also designed for higher temperature operation, making it a suitable choice for automotive, off-line and distributed power, telecom and industrial applications.

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