DMP25H18DLFDE-7 Allicdata Electronics
Allicdata Part #:

DMP25H18DLFDE-7DITR-ND

Manufacturer Part#:

DMP25H18DLFDE-7

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 250V 0.26A DFN2020-6
More Detail: P-Channel 250V 260mA (Ta) 600mW (Ta) Surface Mount...
DataSheet: DMP25H18DLFDE-7 datasheetDMP25H18DLFDE-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.44000
10 +: $ 0.42680
100 +: $ 0.41800
1000 +: $ 0.40920
10000 +: $ 0.39600
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type E)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 600mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 25V
Vgs (Max): ±40V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMP25H18DLFDE-7 is a single n-channel enhancement MOSFET with high performance. It has a continuous drain-source current of up to 25A and a pulsed drain-source current of up to 150A. With a breakdown voltage of 18V, it is ideal for use where high power is needed.

The working principle of this MOSFET is based on the field-effect principle. When a voltage is applied to the gate of the MOSFET, an electric field is generated. This electric field causes a depletion region to form in the region between the source and drain. The depletion layer acts as an insulator, preventing current from flowing between the source and drain. This is the basis of how a MOSFET works.

DMP25H18DLFDE-7 has a wide range of applications. It is widely used in power management, motor control, switching power supplies, and high-speed switching. It also has applications in automotive, telecom and industrial systems. In addition, it can be used in switching amplifiers, voltage regulators, and pulse-width modulation (PWM) circuits. This MOSFET is also suitable for use in a variety of power management applications such as embedded systems, LED lighting, and power supplies.

In summary, DMP25H18DLFDE-7 is a high performance single-channel enhancement MOSFET. It has a breakdown voltage of 18V and a continuous drain-source current of up to 25A. Its working principle is based on the field-effect principle, wherein an electric field is created when a voltage is applied to the gate of the MOSFET. This MOSFET has numerous applications, including power management, motor control, switching power supplies, and LED lighting. Its excellent performance makes it suitable for a variety of power management applications.

The specific data is subject to PDF, and the above content is for reference

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