
Allicdata Part #: | 1N645-1E3MS-ND |
Manufacturer Part#: |
1N645-1E3 |
Price: | $ 1.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | SWITCHING DIODE |
More Detail: | Diode Standard 225V 400mA Through Hole DO-35 (DO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
625 +: | $ 0.92610 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 225V |
Current - Average Rectified (Io): | 400mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 400mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50nA @ 225V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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1N645-1E3 is a silicon rectifier diode that is embedded with a diffused junction and is enclosed in a hermetically sealed package. It is usually used for common applications in general purpose rectification. It can withstand when power dissipation up to 1A and continuous forward current of 0.6A while withstanding voltage up to 400V. 1N645-1E3 can be used in AC adapters and power supplies, in charging and inverter systems, or in battery operated equipment. Additionally, it can be used in various electronic automotive systems and many other circuit applications.
The working principle of 1N645-1E3 relies on its structure as a semiconductor and its ability to conduct current one way only. Through its P and N layer, negative current is absorbed by the N layer while the positive current is absorbed by the P layer. The design and structure of the diode interacts with the applied voltage. When the voltage is the same at both legs of the diode, there is no potential and the diode remains closed. However, when a potential difference is applied, the closed gap on one leg allows current to flow. This flow of electrons supports the movement of current in one direction, which is known as rectification. In order for current to flow, the voltage threshold of the diode must be higher than the applied voltage. When the applied voltage becomes too strong, the diode\'s reverse breakdown value is reached and the voltage flows backward and shorts the circuit, preventing the current from flowing any further. The current that flows from one end of the diode to the other is regulated by the resistance provided by the P and N layers.
1N645-1E3 is ideal for applications in high frequency circuits and can withstand high temperatures. It is a more durable, low-cost solution for better thermodynamic stability and improved electrolyte efficiency. It can be used in circuits as rectifier bridge, in filtering and power conditioning, as well as for regulation in switching circuits. It can also be used as a protection diode, protecting against short circuits and potential damage caused by overvoltage. Additionally, its efficient construction makes it suitable for solar cell applications.
Thanks to its flexible construction, 1N645-1E3 has a wide range of possible applications. It is most commonly used in rectification, power conditioning and voltage regulation. Its high-temperature and high-frequency capabilities make it suitable for many automotive applications such as lighting, windshield wiper, and junction boxes. Furthermore, its useful design can be found in many industrial applications where reliable power is needed, such as printer circuit boards or emergency lighting.
In conclusion, 1N645-1E3 single rectifier diode has proved to be an invaluable solution for high-frequency applications and voltage regulation. Its construction and design make it suitable for many automotive, industrial, and solar cell applications. The simple working principle of the diode helps to protect circuits from overvoltage and short circuits. Its cost-effectiveness, durability, and reliability have made it a go-to solution for many applications.
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